Name

TANII, Takashi

Official Title

Professor Professor

Affiliation

(School of Fundamental Science and Engineering)

Contact Information

Mail Address

Mail Address
tanii@waseda.jp

URL

Web Page URL

http://www.tanii.nano.waseda.ac.jp

Grant-in-aids for Scientific Researcher Number
20339708

Sub-affiliation

Sub-affiliation

Faculty of Science and Engineering(Graduate School of Fundamental Science and Engineering)

Faculty of Science and Engineering(Graduate School of Advanced Science and Engineering)

Affiliated Institutes

ナノテクノロジー研究所

研究所員 2007-2014

ライフサポートイノベーション研究所

研究所員 2014-2014

ナノテクノロジー研究所

研究所員 2015-

アンビエントロニクス研究所

研究所員 2018-

理工学術院総合研究所(理工学研究所)

兼任研究員 2018-

ライフサポートイノベーション研究所

研究所員 2015-2019

ライフサポートイノベーション研究所

研究所員 2019-

Educational background・Degree

Degree

Dr. of Eng. Coursework Waseda University Nanostructural chemistry

Research Field

Keywords

Nano-electronics, Nano-biotechnology

Grants-in-Aid for Scientific Research classification

Interdisciplinary science and engineering / Nano/Micro science / Nanobioscience

Research interests Career

2001-Nanoelectronics

Current Research Theme Keywords:nanofabrication, surface modification, single molecule imaging

Cooperative Research within Japan

Paper

Novel Process for High-Density Buried Nanopyramid Array Fabrication by Means of Dopant Ion Implantation and Wet Etching, Jpn. J. Appl. Phys. 40, 2001, 2837.

M.Koh, T.Goto, A.Sugita, T.Tanii, T.Iida, T.Shinada, T.Matsukawa, I.Ohdomari

Simple Fabrication of Silicon Nanopyramids for High Performance Field Emitter Array, Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials, 2001, 578.

T.Tanii, T.Goto, T.Iida, M.Koh-Masahara, I.Ohdomari

Fabrication of Adenosine Triphosphate-Molecule Recognition Chip by Means of Bioluminous Enzyme Luciferase Jpn. J. Appl. Phys. 40, 2001, L1135.

T.Tanii, T.Goto, T.Iida, M.Koh-Masahara, I.Ohdomari

Novel Nanoprocess for Vertical Double-Gate MOSFET Fabrication by Ion-Bombardment-Retarded Etching, Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002, 426.

M.Masahara, T.Matsukawa, K.Ishii, Y.Liu, M.Nagao, H.Tanoue, T.Tanii, I.Ohdomari, S.Kanemaru, E.Suzuki

Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE), Jpn. J. Appl. Phys. 42, 2003, 1916.

M.Masahara, T.Matsukawa, K.Ishii, Y.Liu, M.Nagao, H.Tanoue, T.Tanii, I.Ohdomari, S.Kanemaru, E.Suzuki

The immobilization of DNA on microstructured patterns fabricated by maskless lithography, Sens. & Actuat. B 97, 2004, 243.

G.-J.Zhang, T.Tanii, T.Zako, T.Funatsu, I.Ohdomari

Patterning of DNA Nanostructures on Silicon Surface by Electron Beam Lithography of Self-Assembled Monolayer, Chem. Commun., 2004 786.

G.-J.Zhang, T.Tanii, T.Funatsu, I.Ohdomari

Preferential Immobilization of Biomolecules onto Silicon Microstructure Array by Means of Electron Beam Lithography onto Organosilane Self-Assembled Monolayer Resist, Appl. Surf. Sci. 234, 2004, 102.

T.Tanii, T.Hosaka, T.Miyake, G.-J.Zhang, T.Zako, T.Funatsu, I.Ohdomari

Selective Growth of Carbon Nanostructures on Nickel Implanted Nanopyramid Array, Appl. Surf. Sci. 234, 2004, 72.

D.Ferrer, T.Shinada, T.Tanii, J.Kurosawa, G.Zhong, Y.Kubo, S.Okamoto, H.Kawarada, I.Ohdomari

Attachment of DNA to Microfabricated Arrays with Self-Assembled Monolayer, Thin Solid Films 464, 2004, 452.

G.-J.Zhang, T.Tanii, T.Miyake, T.Funatsu, I.Ohdomari

Selective Deposition of Polystyrene Nano-particles in the Nanoetchpit-Array on a Silicon Substrate, Chem. Commun., 2004, 978.

M.Tanaka, T.Hosaka, T.Tanii, I.Ohdomari, H.Nishide

Electron Beam Lithography on Organosilane Self-Assembled Monolayer Resist, Jpn. J. Appl. Phys. 43, 2004, 4396.

T.Tanii, T.Hosaka, T.Miyake, I.Ohdomari

Hybridization of Deoxyribonucleic Acid and Immobilization of Green Fluorescent Protein on Nanostructured Organosilane Templates, Jpn. J. Appl. Phys. 44, 2005, 5851.

T.Tanii, T.Hosaka, T.Miyake, Y.Kanari, G.-J.Zhang, T.Funatsu, I.Ohdomari

A Novel Process for Fabrication of Gated Silicon Field Emitter Array Taking Advantage of Ion Bombardment Retarded Etching, Jpn. J. Appl. Phys. 44, 2005, 5191.

T.Tanii, S.Fujita, Y.Numao, I.Matsuya, M.Sakairi, M.Masahara, I.Ohdomari

Nanoscale Patterning of Protein Using Electron Beam Lithography of Organosilane Self-Assembled Monolayers, small 1, 2005, 833.

G.-J.Zhang, T.Tanii, T.Zako, T.Hosaka, T.Miyake, Y.Kanari, T.Funatsu, I.Ohdomari

Enhancement of field emission characteristics of tungsten emitters by single-walled carbon nanotube modification, Appl. Phys. Lett. 88, 2006, 33116.

D.Ferrer, T.Tanii, I.Matsuya, G. Zhong, S.Okamoto, H.Kawarada, T.Shinada, I.Ohdomari

Nanopatterning of Hdroxy-Terminated Self-Assembled Monolayer Taking Advantage of Terminal Group Modification, Chemical Physics Letters 426, 2006, 361.

T.Miyake, T.Tanii, K.Kato, T.Hosaka, Y.Kanari, H.Sonobe, I.Ohdomari

Packing of Submeter-Sized Polysterene Particles within the Micrometer-Sized Recessed Patterns on Silicon Substrate, Science and Technology of Advanced Materials 7, 2006, 451.

M.Tanaka, N.Shimamoto, T.Tanii, I.Ohdomari, H.Nishide

Production of Nanopatterns by a Combination of Electron Beam Lithography and a Self-Assembled Monolayer for an Antibody Nanoarray, Journal of Nanoscience and Nanotechnology 7, 2007, 410.

G.-J.Zhang, T.Tanii, K.Yuzo, I.Ohdomari

Nanometer-Sized Polyradical Particles; Organic Magnetic Dot Array Formed on a Silicon Microfabricated Substrate, Journal of Polymer Science A, 2006 521.

M.Tanaka, S.Imai, T.Tanii, Y.Numao, N.Shimamoto, I.Ohdomari, H.Nishide

A Novel Approach to Au Nanoparticle-Based Identification of DNA Nanoarrays, Frontiers in Bioscience 12, 2007, 4773.

G.-J.Zhang, T.Tanii, Y.Kanari , C.Yasumuro, T.Matsukawa, M.Masahara, I.Ohdomari

Protein Adsorption on Self-Assembled Monolayers Induced by Surface Water Molecule, Jpn. J. Appl. Phys. 46, 2007, 3277.

Y.Kanari, Y.Shoji, H.Ode, T.Miyake, T.Tanii, T.Hoshino, I.Ohdomari

Selectivity Improvement in Protein Nanopatterning with a Hydroxy-Terminated Self-Assembled Monolayer Template, Nanotechnology 18, 2007, 305034.

T.Miyake, T.Tanii, T.Zako, T.Funatsu, I.Ohdomari

Ultrasensitive Detection of Biomolecules Using Functionalized Multi-Walled Carbon Nanotubes, Sens. & Actuat. B 124, 2007, 161.

P.-A.Hu, T.Tanii, G-J.Zhang, T.Hosaka, I.Ohdomari

Single Molecule Imaging of Chaperonin Functions Using Zero-Mode Waveguides, Biophys. J. 554A, 2007.

T.Ueno, T.Tanii, N.Shimamoto, T.Miyake, H.Sonobe, I.Oodomari, T.Funatsu

Real-Time Imaging of Single-Molecule Fluorescence with a Zero-Mode Waveguide for the Analysis of Protein-Protein Interaction, Analytical Chemistry 80, 2008, 6018.

T.Miyake, T.Tanii, H.Sonobe, R.Akahori, N.Shimamoto, T.Ueno, T.Funatsu, I.Ohdomari

Effect of the C-Terminal Truncation on the functional Cycle of Chaperonin GroEL, Implication that the C-Terminal Region Faciliates the Transaction from the Folding-Arrested to the Folding-Competent State, The Journal of Biological Chemistry 283, 2008,

M.Suzuki, T.Ueno, R.Iizuka, T.Miura, T.Zako, R.Akahori, T.Miyake, N.Shimamoto, M.Aoki, T.Tanii, I.Ohdomari, T.Funatsu

Performance enhancement of semiconductor devices by control of discrete dopant distribution, Nanotechnology 20, 2009, 365205.

M.Hori, T.Shinada, K.Taira, N.Shimamoto, T.Tanii, T.Endo, I.Ohdomari

An Experimental Study on Relative Displacement Sensing Using Phototransistor Array for Building Structures, IEEJ Transactions on Electrical and Electronic Engineering 5, 2010, 251.

K.Kanekawa, I.Matsuya, M.Sato, R.Tomishi, M.Takahashi, S.Miura, Y.Suzuki, T.Hatada, R.Katamura, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani, I.Ohdomari

Development of noncontact-type relative story displacement monitoring system

I.Matsuya, R.Tomishi, M.Sato, K.Kanekawa, M.Takahashi, S.Miura, Y.Suzuki, T.Hatada, M.Oshio, R.Katamura, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani, and I.Ohdomari

Proceedings of The 5th ANCRiSST, 2010, 550

An Experimental Study on Interstory Displacement Measurement Using Phototransistor Array

K.Kanekawa, I.Matsuya, M.Sato, R.Tomishi, M.Takahash, S.Miura, Y.Suzuki, T.Hatada, R.Katamura, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani and I.Ohdomari

Proceedings of The 5th ANCRiSST, 2010, 161

Single-molecule study on the decay process of the football-shaped GroEL-GroES complex using zero-mode waveguides

T.Sameshima, R.Iizuka, T.Ueno, J.Wada, M.Aoki, N.Shimamoto, I.Ohdomari, T.Tanii, T.Funatsu

The Journal of Biological Chemistry 285 (2010) 23159

An Optical Lateral-Displacement Sensor for Measuring the Interstory of a Building

I.Matsuya, R.Tomishi, M.Sato, K.Kanekawa, T.Hatada, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani, I.Ohdomari

proceedings of Fifth World Structural Control and Monitoring

An Experimental Study on Relative Displacement Direct Sensing in Real Time using Phototransistor Array for Building Structures

K.Kanekawa, I.Matsuya, M.Sato, Y.Nitta, T.Tanii, A.Nishitani, S.Shoji, I.Ohdomari, T.Hatada, M.Takahashi

proceedings of Fifth World Structural Control and Monitoring

Measuring Relative-Story Displacement and Local Inclination Angle Using Multiple Position-Sensitive Detectors

I.Matsuya, R.Katamura, M.Sato, M.Iba, H.Kondo, K.Kanekawa, M.Takahashi, T.Hatada, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani, I.Ohdomari

Sensors 10, 2010, 9687-9697

A Relative-Story Displacement Sensor Resolving the Angular Error Problem

I.Matsuya, M.Sato, H.Kondo, M.Iba, K.Kanekawa, T.Tanii, A.Nishitani, I.Ohdomari, R.Katamura

Proceeding of IEEE SENSORS 2010 Conference, 1441-1444.

Noncontact-type relative displacement monitoring system using position sensitive detector

I.Matsuya, M.Oshio, R.Tomishi, M.Sato, K.Kanekawa, M.Takahashi, S.Miura, Y.Suzuki, T.Hatada, R.Katamura, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani, I.Ohdomari

AIJ Journal of Technology and Design 16, 2010, 469-472

Reliable Single Atom Doping and Discrete Dopant Effects on Transistor Performance

T.Shinada, M.Hori, Y.Ono, K.Taira, A.Komatsubara, T.Tanii, T.Endoh, and I.Ohdomari

IEDM Tech. Dig., 2010, 592

Green Tea Epigalocatechin Gallate (EGCG) Exhibits Anticancer Effect in Human Pancreatic Carcinoma Cells via Inhibition of both Focal Adhesion Kinase and Insulin-like Growth Factor-I Receptor

H.A.Vu, Y.Beppu, H.T.Chi, K.Sasaki, H.Yamamoto, P.T.Xinh, T.Tanii, Y.Hara, T.Watanabe, Y.Sato, I.Ohdomari

Journal of Biomedicine and Biotechnology, 2010, 290516

Development of Lateral-Displacement Sensor for Real-Time Detection of Structural Damage

I.Matsuya, R.Tomishi, M.Sato, K.Kanekawa, Y.Nitta, M.Takahashi, S.Miura, Y.Suzuki, T.Hatada, R.Katamura, T.Tanii, S.Shoji, A.Nishitani, I.Ohdomari

IEEJ Transactions on Electrical and Electronic Engineering, 6, (2011), 266-272

Relative-Story Displacement Sensor for Structural Health Monitoring Capable of Measuring the Local Inclination Angle and the Relative Displacement

I.Matsuya, R.Katamura, M.Sato, H.Kondo, M.Iba, K.Kanekawa, Y.Nitta, T.Tanii, S.Shoji, A.Nishitanim, I.Ohdomari

Transactions of the Japan Society of Mechanical Engineers A 77, 2011, in press

Fabrication of Zero-Mode Waveguide by Ultraviolet Nanoimprint Lithography Lift-Off Process

J.Wada, S.Ryu, Y.Asano, T.Ueno, T.Funatsu, T.Yukawa, J.Mizuno, T.Tanii

Jpn. J. Appl. Phys. 50 (2011) 06GK07

Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic SIngle-Ion Doping

M.Hori, T.Shinada, K.Taira, A.Komatsubara, Y.Ono, T.Tanii, T.Endoh, and I.Ohdomari

Applied Physics Express 4 (2011) 046501

Application of Organosilane Monolayer Template to Quantitative Evaluation of Cancer Cell Adhesive Ability

T.Tanii, K.Sasaki, K.Ichisawa, T.Demura, Y.Beppu, H.A.Vu, H.T.Chi, H.Yamamoto, Y.Sato

Jpn. J. Appl. Phys. 50 (2011) 06GL01

Relative-Story Displacement Sensor for Measuring Five-Degree-of-Freedom Movement of Building Layers

I.Matsuya, R.Katamura, M.Sato, M.Iba, H.Kondo, K.Kanekawa, M.Takahashi, T.Hatada, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani and I.Ohdomari

Proceedings of SPIE Smart Structures / NDE 2011, 7981 (2011) 79810C

A Relative-Story Displacement Sensor for Structural Health Monitoring Capable of Measuring the Local Inclination Angle and the Relative Displacement

I.Matsuya, R.Katamura, M.Sato, H.Kondo, M.Iba, K.Kanekawa, Y.Nitta, T.Tanii, S.Shoji, A.Nishitani and I.Ohdomari

Transactions of the Japan Society of Mechanical Engineers Part A 77 (2011) 736

Impact of a few Dopant Positions Controlled by Deterministic Single-Ion Doping on the Transconductance of Field-Effect Transistors

M.Hori, T.Shinada, Y.Ono, A.Komatsubara, K.Kumagai, T.Tanii, T.Endoh, and I.Ohdomari

Appl. Phys. Lett. 99 (2011) 062103

In-situ guidance of individual neuronal processes by wet femtosecond-laser processing of self-assembled monolayers

H.Yamamoto, K.Okano, T.Demura, Y.Hosokawa, H.Masuhara, T.Tanii, S.Nakamura

Appl. Phys. Lett. 99 (2011) 163701

Single-Molecule Imaging of 1:2 Groel-Groes Complexes in Zero-Mode Waveguides

Sameshima, Tomoya;Ueno, Taro;Wada, Junichi;Iizuka, Ryo;Aoki, Mutsuko;Shimamoto, Naonobu;Ohdomari, Iwao;Tanii, Takashi;Funatsu, Takashi

BIOPHYSICAL JOURNAL 98(3) p.34A - 34A2010-2010

WoS

Detail

ISSN:0006-3495

An Experimental Study on Relative Displacement Sensing Using Phototransistor Array for Building Structures

Kanekawa, Kiyoshi;Matsuya, Iwao;Sato, Maya;Tomishi, Ryota;Takahashi, Motoichi;Miura, Satoru;Suzuki, Yasutsugu;Hatada, Tomohiko;Katamura, Ryuta;Nitta, Yoshihiro;Tanii, Takashi;Shoji, Shuichi;Nishitani, Akira;Ohdomari, Iwao

IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING 5(2) p.251 - 2552010-2010

DOIWoS

Detail

ISSN:1931-4973

Single-molecule Study on the Decay Process of the Football-shaped GroEL-GroES Complex Using Zero-mode Waveguides

Sameshima, Tomoya;Iizuka, Ryo;Ueno, Taro;Wada, Junichi;Aoki, Mutsuko;Shimamoto, Naonobu;Ohdomari, Iwao;Tanii, Takashi;Funatsu, Takashi

JOURNAL OF BIOLOGICAL CHEMISTRY 285(30) p.23157 - 231622010-2010

DOIWoS

Detail

ISSN:0021-9258

Measuring Relative-Story Displacement and Local Inclination Angle Using Multiple Position-Sensitive Detectors

Matsuya, Iwao;Katamura, Ryuta;Sato, Maya;Iba, Miroku;Kondo, Hideaki;Kanekawa, Kiyoshi;Takahashi, Motoichi;Hatada, Tomohiko;Nitta, Yoshihiro;Tanii, Takashi;Shoji, Shuichi;Nishitani, Akira;Ohdomari, Iwao

SENSORS 10(11) p.9687 - 96972010-2010

DOIWoS

Detail

ISSN:1424-8220

Green Tea Epigallocatechin Gallate Exhibits Anticancer Effect in Human Pancreatic Carcinoma Cells via the Inhibition of Both Focal Adhesion Kinase and Insulin-Like Growth Factor-I Receptor

Vu, Hoang Anh;Beppu, Yuuichi;Chi, Hoang Thanh;Sasaki, Kousuke;Yamamoto, Hideaki;Xinh, Phan Thi;Tanii, Takashi;Hara, Yukihiko;Watanabe, Toshiki;Sato, Yuko;Ohdomari, Iwao

JOURNAL OF BIOMEDICINE AND BIOTECHNOLOGY 2010-2010

DOIWoS

Detail

ISSN:1110-7243

Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping

Hori, Masahiro;Shinada, Takahiro;Taira, Keigo;Komatsubara, Akira;Ono, Yukinori;Tanii, Takashi;Endoh, Tetsuo;Ohdomari, Iwao

APPLIED PHYSICS EXPRESS 4(4) 2011-2011

DOIWoS

Detail

ISSN:1882-0778

Development of Lateral Displacement Sensor for Real-Time Detection of Structural Damage

Matsuya, Iwao;Tomishi, Ryota;Sato, Maya;Kanekawa, Kiyoshi;Nitta, Yoshihiro;Takahashi, Motoichi;Miura, Satoru;Suzuki, Yasutsugu;Hatada, Tomohiko;Katamura, Ryuta;Tanii, Takashi;Shoji, Shuichi;Nishitani, Akira;Ohdomari, Iwao

IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING 6(3) p.266 - 2722011-2011

DOIWoS

Detail

ISSN:1931-4973

Fabrication of Zero-Mode Waveguide by Ultraviolet Nanoimprint Lithography Lift-Off Process

Wada, Junichi;Ryu, Shou;Asano, Yuji;Ueno, Taro;Funatsu, Takashi;Yukawa, Takao;Mizuno, Jun;Tanii, Takashi

JAPANESE JOURNAL OF APPLIED PHYSICS 50(6) 2011-2011

DOIWoS

Detail

ISSN:0021-4922

Application of Organosilane Monolayer Template to Quantitative Evaluation of Cancer Cell Adhesive Ability

Tanii, Takashi;Sasaki, Kosuke;Ichisawa, Kota;Demura, Takanori;Beppu, Yuichi;Vu, Hoan Anh;Chi, Hoan Thanh;Yamamoto, Hideaki;Sato, Yuko

JAPANESE JOURNAL OF APPLIED PHYSICS 50(6) 2011-2011

DOIWoS

Detail

ISSN:0021-4922

Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors

Hori, Masahiro;Shinada, Takahiro;Ono, Yukinori;Komatsubara, Akira;Kumagai, Kuninori;Tanii, Takashi;Endoh, Tetsuo;Ohdomari, Iwao

APPLIED PHYSICS LETTERS 99(6) 2011-2011

DOIWoS

Detail

ISSN:0003-6951

In-situ guidance of individual neuronal processes by wet femtosecond-laser processing of self-assembled monolayers

Yamamoto, Hideaki;Okano, Kazunori;Demura, Takanori;Hosokawa, Yoichiroh;Masuhara, Hiroshi;Tanii, Takashi;Nakamura, Shun

APPLIED PHYSICS LETTERS 99(16) 2011-2011

DOIWoS

Detail

ISSN:0003-6951

Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position

Hori, Masahiro;Taira, Keigo;Komatsubara, Akira;Kumagai, Kuninori;Ono, Yukinori;Tanii, Takashi;Endoh, Tetsuo;Shinada, Takahiro

APPLIED PHYSICS LETTERS 101(1) 2012-2012

DOIWoS

Detail

ISSN:0003-6951

In situ guidance of individual neurites by wet femtosecond-laser processing of organosilane monolayers

Yamamoto, Hideaki;Okano, Kazunori;Tanii, Takashi;Demura, Takanori;Hosokawa, Yoichiroh;Nakamura, Shun

NEUROSCIENCE RESEARCH 71p.E236 - E2372011-2011

DOIWoS

Detail

ISSN:0168-0102

Differential neurite outgrowth is required for axon specification by cultured hippocampal neurons

Yamamoto, Hideaki;Demura, Takanori;Morita, Mayu;Banker, Gary A.;Tanii, Takashi;Nakamura, Shun

JOURNAL OF NEUROCHEMISTRY 123(6) p.904 - 9102012-2012

DOIWoS

Detail

ISSN:0022-3042

Probing Single-Molecule Enzymatic Dynamics of B-Glucosidase using Zero-Mode Waveguides

Iizuka, Ryo;Toshimitsu, Ikumi;Tahara, Kentaro;Arai, Hirokatsu;Tetsuka, Toshihiro;Matsuoka, Koji;Ryu, Shou;Asano, Yuji;Tanii, Takashi;Igarashi, Kiyohiko;Samejima, Masahiro;Funatsu, Takashi

BIOPHYSICAL JOURNAL 104(2) p.178A - 178A2013-2013

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Detail

ISSN:0006-3495

Improving zero-mode waveguide structure for enhancing signal-to-noise ratio of real-time single-molecule fluorescence imaging: A computational study

Tanii, Takashi;Akahori, Rena;Higano, Shun;Okubo, Kotaro;Yamamoto, Hideaki;Ueno, Taro;Funatsu, Takashi

PHYSICAL REVIEW E 88(1) 2013-2013

DOIWoS

Detail

ISSN:1539-3755

In situ modification of cell-culture scaffolds by photocatalytic decomposition of organosilane monolayers

Yamamoto, Hideaki;Demura, Takanori;Morita, Mayu;Kono, Sho;Sekine, Kohei;Shinada, Takahiro;Nakamura, Shun;Tanii, Takashi

BIOFABRICATION 6(3) 2014-2014

DOIWoS

Detail

ISSN:1758-5082

Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

Tamura, Syuto;Koike, Godai;Komatsubara, Akira;Teraji, Tokuyuki;Onoda, Shinobu;McGuinness, Liam P.;Rogers, Lachlan;Naydenov, Boris;Wu, E.;Yan, Liu;Jelezko, Fedor;Ohshima, Takeshi;Isoya, Junichi;Shinada, Takahiro;Tanii, Takashi

APPLIED PHYSICS EXPRESS 7(11) 2014-2014

DOIWoS

Detail

ISSN:1882-0778

Drift displacement data based estimation of cumulative plastic deformation ratios for buildings

Nishitani, Akira;Matsui, Chisa;Hara, Yushiro;Xiang, Ping;Nitta, Yoshihiro;Hatada, Tomohiko;Katamura, Ryota;Matsuya, Iwao;Tanii, Takashi

SMART STRUCTURES AND SYSTEMS 15(3) p.881 - 8962015-2015

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Detail

ISSN:1738-1584

Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond

Liu, Yan;Chen, Gengxu;Rong, Youying;McGuinness, Liam Paul;Jelezko, Fedor;Tamura, Syuto;Tanii, Takashi;Teraji, Tokuyuki;Onoda, Shinobu;Ohshima, Takeshi;Isoya, Junichi;Shinada, Takahiro;Wu, E.;Zeng, Heping

SCIENTIFIC REPORTS 52015-2015

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Detail

ISSN:2045-2322

Quantitative comparison of cancer and normal cell adhesion using organosilane monolayer templates: an experimental study on the anti-adhesion effect of green-tea catechins

Sakamoto, Rumi;Kakinuma, Eisuke;Masuda, Kentaro;Takeuchi, Yuko;Ito, Kosaku;Iketaki, Kentaro;Matsuzaki, Takahisa;Nakabayashi, Seiichiro;Yoshikawa, Hiroshi Y.;Yamamoto, Hideaki;Sato, Yuko;Tanii, Takashi

IN VITRO CELLULAR & DEVELOPMENTAL BIOLOGY-ANIMAL 52(8) p.799 - 8052016-2016

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Detail

ISSN:1071-2690

Identification of yield drift deformations and evaluation of the degree of damage through the direct sensing of drift displacements

Xiang, Ping;Nishitani, Akira;Marutani, Shohei;Kodera, Kenzo;Hatada, Tomohiko;Katamura, Ryuta;Kanekawa, Kiyoshi;Tanii, Takashi

EARTHQUAKE ENGINEERING & STRUCTURAL DYNAMICS 45(13) p.2085 - 21022016-2016

DOIWoS

Detail

ISSN:0098-8847

Single atom doping and Discrete Dopant Effects on Transistor Performance

SHINADA Takahiro;HORI Masahiro;TAIRA Keigo;KOMATSUBARA Akira;TANII Takashi;OHDOMARI Iwao;ONO Yukinori;ENDOH Tetsuo

2011(35) p.1 - 42011/03-2011/03

CiNii

Deterministic-doped Silicon Devices and Their Quantum Transport

SHINADA Takahiro;HORI Masahiro;GUAGLIARDO Filipo;ONO Yukinori;KUMAGAI Kuninori;TANII Takashi;PRATI Enrico

111(425) p.1 - 52012/01-2012/01

CiNii

Deterministic-doped Silicon Devices and Their Quantum Transport

SHINADA Takahiro;HORI Masahiro;GUAGLIARDO Filipo;ONO Yukinori;KUMAGAI Kuninori;TANII Takashi;PRATI Enrico

111(426) p.1 - 52012/01-2012/01

CiNii

711 A Relative-Story Displacement Sensor for Structural Health Monitoring Capable of Measuring the Local Inclination Angle and the Relative Displacement

MATSUYA Iwao;KATAMURA Ryuta;SATO Maya;KONDO Hideaki;IBA Miroku;KANEKAWA Kiyoshi;NITTA Yoshihiro;TANII Takashi;SHOJI Shuichi;NISHITANI Akira;OHDOMARI Iwao

2010p.434 - 4362010/10-2010/10

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Detail

Outline:We propose a novel relative-story displacement sensor for structural health monitoring. The sensor is composed of three pairs of position sensitive detector (PSD) units and light emitting diode (LED) arrays, and is capable of measuring both the local inclination angle of the PSD unit and the relative displacement between the PSD unit and the LED array. By immobilizing the LED arrays on the ceiling and the PSD units on the floor, we can accurately measure the relative-story displacement in real time. We have verified the measurement accuracy of the developed sensor using a shaking table and a θ stage, and the accuracy was evaluated to be approximately 0.15 mm in the displacement and 0.1 mrad in the local rotation angle. The results indicate that the developed sensor is applicable to the relative-story displacement measurement for the diagnostics of an actual building.

Deterministic-doped Silicon Devices and Their Quantum Transport

SHINADA Takahiro;HORI Masahiro;GUAGLIARDO Filipo;ONO Yukinori;KUMAGAI Kuninori;TANII Takashi;PRATI Enrico

IEICE technical report. Electron devices 111(425) p.1 - 52012/01-2012/01

CiNii

Detail

ISSN:0913-5685

Outline:Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D^0 and D^- states; Hubbard band formation due to the inter-donor coupling. Our deterministic doping method is more effective and reliable for single-dopant transistor development and paves the way towards single atom electronics for extended CMOS applications.

Deterministic-doped Silicon Devices and Their Quantum Transport

SHINADA Takahiro;HORI Masahiro;GUAGLIARDO Filipo;ONO Yukinori;KUMAGAI Kuninori;TANII Takashi;PRATI Enrico

Technical report of IEICE. SDM 111(426) p.1 - 52012/01-2012/01

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Detail

ISSN:0913-5685

Outline:Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D^0 and D^- states; Hubbard band formation due to the inter-donor coupling. Our deterministic doping method is more effective and reliable for single-dopant transistor development and paves the way towards single atom electronics for extended CMOS applications.

21424 Relative Story Displacement Measurement System of Building Structures by Noncontact-type Sensors : Part-6 Development of Relative Story Displacement Sensor Capable of 5DOF Measurement

MATSUYA Iwao;KATAMURA Ryuta;HATADA Tomohiko;TAKAHASHI Motoichi;TANII Takashi;NITTA Yoshihiro;NISHITANI Akira

Summaries of technical papers of Annual Meeting Architectural Institute of Japan. B-2, Structures II, Structural dynamics nuclear power plants 2011p.847 - 8482011/07-2011/07

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ISSN:13414461

21056 Relative Story Displacement Measurement System of Building Structures by Nocontact-type Sensors : Part-9 Estimation of Story hystereses with E-defense

MATSUI Chisa;NISHITANI Akira;TANII Takashi;NITTA Yoshihiro;HATADA Tomohiko

Summaries of technical papers of annual meeting 2013(0) p.111 - 1122013/08-2013/08

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ISSN:18839363

21030 Verification of Damage Monitoring System Based on Measurement of Relative Story Displacements in E-Defense Shaking Table Test of High-rise Steel Building : Part-1 System Outline

KATAMURA Ryuta;HATADA Tomohiko;HAGIWARA Hajime;TANII Takashi;NITTA Yoshihiro;NISHITANI Akira

Summaries of technical papers of annual meeting 2014(0) p.59 - 602014/09-2014/09

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ISSN:18839363

21031 Verification of Damage Monitoring System based on Measurement of Relative Story Displacements in E-Defense Shaking Table Test of High-rise Steel Building : Part-2 Measurement and Damage Evaluation Results

HATADA Tomohiko;KATAMURA Ryuta;HAGIWARA Hajime;TANII Takashi;NITTA Yoshihiro;NISHITANI Akira

Summaries of technical papers of annual meeting 2014(0) p.61 - 622014/09-2014/09

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ISSN:18839363

21472 Verification of Damage Monitoring System based on Measurement of Relative Story Displacements in E-Defense Shaking Table Test of High-rise Steel Building : Part-3 Verification of Damage Evaluation Method

HATADA Tomohiko;KATAMURA Ryuta;HAGIWARA Hajime;TANII Takashi;NITTA Yoshihiro;NISHITANI Akira

Summaries of technical papers of annual meeting 2015(0) p.943 - 9442015/09-2015/09

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ISSN:18839363

21473 Verification of Damage Monitoring System based on Measurement of Relative Story Displacements in E-Defense Shaking Table Test of High-rise Steel Building : Part-4 Measurement of Local Rotation Angle

KOMURO Masaharu;HATADA Tomohiko;KATAMURA Ryuta;NISHITANI Akira;TANII Takashi

Summaries of technical papers of annual meeting 2015(0) p.945 - 9462015/09-2015/09

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ISSN:18839363

21aBK-4 Current Status of Creation Technique of Color Centers in Diamonds by Quantum Beams

Onoda S.;Haruyama M.;Teraji T.;Isoya J.;Koike G.;Higashimata I.;Inaba M.;Yamano K.;Kato K.;Muller Christoph;McGuinness Liam;Balasubramanian Priyadharshini;Naydenov Boris;Jelezko Fedor;Sato S.-i.;Ohshima T.;Kada W.;Hanaizumi O.;Tanii T.;Kawarada H.

Meeting Abstracts of the Physical Society of Japan 71(0) p.725 - 7262016-2016

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ISSN:2189079X

A Relative-Story Displacement Sensor for Structural Health Monitoring Capable of Measuring the Local Inclination Angle and the Relative Displacement

MATSUYA Iwao;KATAMURA Ryuta;SATO Maya;KONDO Hideaki;IBA Miroku;KANEKAWA Kiyoshi;NITTA Yoshihiro;TANII Takashi;SHOJI Shuichi;NISHITANI Akira;OHDOMARI Iwao

TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A 77(777) p.736 - 7402011-2011

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Detail

ISSN:1884-8338

Outline:We propose a novel relative-story displacement sensor for structural health monitoring. The sensor is composed of three pairs of position sensitive detector (PSD) units and light emitting diode (LED) arrays, and is capable of measuring both the local inclination angle of the PSD unit and the relative displacement between the PSD unit and the LED array. By immobilizing the LED arrays on the ceiling and the PSD units on the floor, we can accurately measure the relative-story displacement in real time. We have verified the measurement accuracy of the developed sensor using a shaking table and a θ stage, and the accuracy was evaluated to be approximately 0.15 mm in the displacement and 0.1 mrad in the local rotation angle. The results indicate that the developed sensor is applicable to the relative-story displacement measurement for the diagnostics of an actual building.

Development of 5-DOF Relative-Story Displacement Sensor for Structural Health Monitoring

MATSUYA Iwao

TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A 78(789) p.1451 - 14592012-2012

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Detail

ISSN:0387-5024

Outline:We have developed a novel relative-story displacement sensor for structural health monitoring which is capable of measuring the 5-DOF movement of building layers. Three pairs of infrared-light emitting diode arrays and position sensitive detector units were used for simultaneously measuring the relative displacement, the local inclination angle, and the torsion angle between two adjacent layers. For verification, laboratory tests were carried out using a shaking table, a motorized micrometer, and a rotation stage. In the static experiment, it is verified that the local inclination angle and the torsion angle can be measured as well as the relative-story displacement using the sensor system. The resolution of the sensor system in the displacement measurement, that in the inclination angle measurement, and that in the torsion angle measurement were evaluated to be 0.10 mm, 34.4 μrad, and 14.6 μrad, respectively. In the dynamic response experiment, the accuracy of the sensor system was experimentally evaluated to be 0.20 mm in the relative-displacement measurement, 110 μrad in the inclination angle measurement, and 90 μrad in the torsion angle measurement, respectively. These results indicate that the developed sensor system has a sufficient accuracy for structural health monitoring.

NONCONTACT-TYPE RELATIVE DISPLACEMENT MONITORING SYSTEM USING POSITION SENSITIVE DETECTOR

MATSUYA Iwao;OSHIO Makoto;TOMISHI Ryota;SATO Maya;KANEKAWA Kiyoshi;TAKAHASHI Motoichi;MIURA Satoru;SUZUKI Yasutsugu;HATADA Tomohiko;KATAMURA Ryuta;NITTA Yoshihiro;TANII Takashi;SHOJI Shuichi;NISHITANI Akira;OHDOMARI Iwao

AIJ Journal of Technology and Design 16(33) p.469 - 4722010-2010

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Detail

ISSN:1341-9463

Outline:Recently, relative displacement measurement attracts much attention because of its capability for directly monitoring damages of a building structure. We have developed a noncontact-type relative displacement monitoring system by arranging a two-dimensional PSD paired with a LED array on each story, and investigated the feasibility of this system from the viewpoint of measurement accuracy.

A Relative-Story Displacement Sensor for Structural Health Monitoring Capable of Measuring the Local Inclination Angle and the Relative Displacement

MATSUYA Iwao;KATAMURA Ryuta;SATO Maya;KONDO Hideaki;IBA Miroku;KANEKAWA Kiyoshi;NITTA Yoshihiro;TANII Takashi;SHOJI Shuichi;NISHITANI Akira;OHDOMARI Iwao

Transactions of the Japan Society of Mechanical Engineers Series B 77(777) p.736 - 7402011-2011

CiNii

Detail

ISSN:0387-5008

Outline:We propose a novel relative-story displacement sensor for structural health monitoring. The sensor is composed of three pairs of position sensitive detector (PSD) units and light emitting diode (LED) arrays, and is capable of measuring both the local inclination angle of the PSD unit and the relative displacement between the PSD unit and the LED array. By immobilizing the LED arrays on the ceiling and the PSD units on the floor, we can accurately measure the relative-story displacement in real time. We have verified the measurement accuracy of the developed sensor using a shaking table and a θ stage, and the accuracy was evaluated to be approximately 0.15 mm in the displacement and 0.1 mrad in the local rotation angle. The results indicate that the developed sensor is applicable to the relative-story displacement measurement for the diagnostics of an actual building.

AN EXPERIMENTAL STUDY ON SIMULTANEOUS MEASUREMENT OF RELATIVE DISPLACEMENT AND LOCAL INCLINATION ANGLE

MATSUYA Iwao;KATAMURA Ryuta;IHARA Ikuo;TANII Takashi;NITTA Yoshihiro;NISHITANI Akira

AIJ Journal of Technology and Design 19(43) p.951 - 9542013-2013

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ISSN:1341-9463

Outline:We have developed a noncontact-type relative displacement sensor for structural health monitoring which is capable of measuring relative displacement and rotation angle of the object independently. The sensor is composed of a laser as a measurement target and two position sensitive detectors (PSDs). The accuracy of the sensor system was experimentally evaluated to be 0.10 mm in the relative displacement measurement and 0.22 mrad in the rotation angle measurement respectively. These results indicate that the developed sensor system has a sufficient accuracy for structural health monitoring.

Surface Modification of Cell Scaffold in Aqueous Solution Using TiO2 Photocatalysis and Linker Protein L2 for Patterning Primary Neurons

Sekine Kohei;Yamamoto Hideaki;Kono Sho;Ikeda Takeshi;Kuroda Akio;Tanii Takashi

e-J. Surf. Sci. Nanotech. 13(0) p.213 - 2182015-2015

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ISSN:1348-0391

Outline:Titanium dioxide (TiO2) photocatalysis can be applied to pattern proteins and cells under aqueous solution. In this work, we extended the application of this technique to patterning primary neurons, a type of cell with relatively weak adhesibility. For this purpose, we employed ribosomal protein L2 (RPL2) that has high affinity toward silica and metal oxides, including TiO2, to stably bind a neuronal adhesion protein laminin to the TiO2 surface. We utilized two types of molecular recognition to achieve this—binding of anti-laminin antibody to its antigen (laminin) and binding of protein A to the antibody. We show that a protein complex consisting of laminin/anti-laminin antibody/protein A-RPL2 is spontaneously formed by simply mixing the precursor proteins in solution phase. We then show that the surface coated with the protein complex supports stable growth of rat hippocampal neurons. Finally, we show that the cells can be selectively grown on the protein complex patterned with the TiO2-assisted method. The protocol established in this work is a unique combination of a top-down micropatterning of the surface using TiO2 photocatalysis and a bottom-up self-assembly of biomolecules, which can be further applied to pattern a wide range of proteins and cells. [DOI: 10.1380/ejssnt.2015.213]

Modification of Cell-Substrate Interface Using TiO2 Photocatalysis

YAMAMOTO Hideaki;HIRANO-IWATA Ayumi;TANII Takashi;NIWANO Michio

Hyomen Kagaku 37(5) p.224 - 2292016-2016

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ISSN:0388-5321

Outline:Dissociated neurons form a uniform network in culture that covers the whole coverslip. The number of neurons in the network and extent of their axon/dendrite elaboration can be controlled by using micropatterned surfaces as growth scaffolds. "Defined" neuronal networks thus fabricated make it possible to study how structure of a network correlates with its functional properties. We first describe surface micropatterning techniques can be used to make an array of neurons and to direct axon-dendrite polarity of each cell. To create functional networks, the isolated neurons must subsequently be interconnected. To accomplish this, the cell-repellent domain between individual neurons needs to be altered from cell-repellent to cell-permissive in the culture medium, so that the neurons would be hard-wired. We developed for this purpose a novel surface modification method using titanium dioxide photocatalysis.

21aBK-4 Current Status of Creation Technique of Color Centers in Diamonds by Quantum Beams

Onoda S.;Haruyama M.;Teraji T.;Isoya J.;Koike G.;Higashimata I.;Inaba M.;Yamano K.;Kato K.;Muller Christoph;McGuinness Liam;Balasubramanian Priyadharshini;Naydenov Boris;Jelezko Fedor;Sato S.-i.;Ohshima T.;Kada W.;Hanaizumi O.;Tanii T.;Kawarada H.

Meeting Abstracts of the Physical Society of Japan 71(0) p.725 - 7262016-2016

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Fabrication of micropatterned surface for cancer cell sorting

Wakabayashi Hikaru;Takeuchi Yuko;Tanaka Manabu;Tanii Takashi

Abstract of annual meeting of the Surface Science of Japan 37(0) 2017-2017

CiNii

In situ modification of cell-culture scaffold by photocatalysis of visible-light-responsive TiO2 film

Kono Sho;Kurotobi Atsushi;hatto kohei;Yamamoto Hideaki;Hirano-Iwata Ayumi;Tanii Takashi

Abstract of annual meeting of the Surface Science of Japan 37(0) 2017-2017

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Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

Kageura Taisuke;Kato Kanami;Yamano Hayate;Suaebah Evi;Kajiya Miki;Kawai Sora;Inaba Masafumi;Tanii Takashi;Haruyama Moriyoshi;Yamada Keisuke;Onoda Shinobu;Kada Wataru;Hanaizumi Osamu;Teraji Tokuyuki;Isoya Junichi;Kono Shozo;Kawarada Hiroshi

Appl. Phys. Express 10(5) 2017/04-2017/04

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ISSN:1882-0778

Outline:A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 ± 0.06 and 0.46 ± 0.03 have been obtained for single NVcenters formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NVcenters near the surface compared with the states obtained for alternatively terminated surfaces.

Charge state stabilization of shallow nitrogen vacancy centers in diamond by oxygen surface modification

Yamano Hayate;Kawai Sora;Kato Kanami;Kageura Taisuke;Inaba Masafumi;Okada Takuma;Higashimata Itaru;Haruyama Moriyoshi;Tanii Takashi;Yamada Keisuke;Onoda Shinobu;Kada Wataru;Hanaizumi Osamu;Teraji Tokuyuki;Isoya Junichi;Kawarada Hiroshi

Jpn. J. Appl. Phys. 56(4) 2017/03-2017/03

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ISSN:0021-4922

Outline:We investigated the charge state stability and coherence properties of near-surface single nitrogen vacancy (NV) centers in 12C-enriched diamond for potential use in nanoscale magnetic field sensing applications. The stability of charge states in negatively charged NV centers (NV) was evaluated using one of the pulsed optically detected magnetic resonance measurements, Rabi oscillation measurements. During the accumulation of Rabi oscillations, an unstable shallow NVwas converted to a neutral state. As a result, the contrast of Rabi oscillations degraded, depending on charge state stability. We stabilized the NVstate of very shallow NV centers (∼2.6 ± 1.1 nm from the surface) created by 1.2 keV nitrogen ion implantation by diamond surface modification, UV/ozone exposure, and oxygen annealing. This improvement indicates that we can suppress the upward surface band bending and surface potential fluctuations through Fermi level pinning originating from oxygen-terminated diamond surfaces.

Green tea epigallocatechin gallate exhibits anticancer effect in human pancreatic carcinoma cells via the inhibition of both focal adhesion kinase and insulin-like growth factor-I receptor.

Vu Hoang Anh;Beppu Yuuichi;Chi Hoang Thanh;Sasaki Kousuke;Yamamoto Hideaki;Xinh Phan Thi;Tanii Takashi;Hara Yukihiko;Watanabe Toshiki;Sato Yuko;Ohdomari Iwao

Green tea epigallocatechin gallate exhibits anticancer effect in human pancreatic carcinoma cells via the inhibition of both focal adhesion kinase and insulin-like growth factor-I receptor. 20102010-2010

DOI

Detail

ISSN:1110-7251

Outline::The exact molecular mechanism by which epigallocatechin gallate (EGCG) suppresses human pancreatic cancer cell proliferation is unclear. We show here that EGCG-treated pancreatic cancer cells AsPC-1 and BxPC-3 decrease cell adhesion ability on micro-pattern dots, accompanied by dephosphorylations of both focal adhesion kinase (FAK) and insulin-like growth factor-1 receptor (IGF-1R) whereas retained the activations of mitogen-activated protein kinase and mammalian target of rapamycin. The growth of AsPC-1 and BxPC-3 cells can be significantly suppressed by EGCG treatment alone in a dose-dependent manner. At a dose of 100 μM which completely abolishes activations of FAK and IGF-1R, EGCG suppresses more than 50% of cell proliferation without evidence of apoptosis analyzed by PARP cleavage. Finally, the MEK1/2 inhibitor U0126 enhances growth-suppressive effect of EGCG. Our data suggests that blocking FAK and IGF-1R by EGCG could prove valuable for targeted therapy, which can be used in combination with other therapies, for pancreatic cancer.

Measuring relative-story displacement and local inclination angle using multiple position-sensitive detectors.

Matsuya Iwao;Katamura Ryuta;Sato Maya;Iba Miroku;Kondo Hideaki;Kanekawa Kiyoshi;Takahashi Motoichi;Hatada Tomohiko;Nitta Yoshihiro;Tanii Takashi;Shoji Shuichi;Nishitani Akira;Ohdomari Iwao

Measuring relative-story displacement and local inclination angle using multiple position-sensitive detectors. 10(11) 2010-2010

DOI

Detail

ISSN:1424-8220

Outline::We propose a novel sensor system for monitoring the structural health of a building. The system optically measures the relative-story displacement during earthquakes for detecting any deformations of building elements. The sensor unit is composed of three position sensitive detectors (PSDs) and lenses capable of measuring the relative-story displacement precisely, even if the PSD unit was inclined in response to the seismic vibration. For verification, laboratory tests were carried out using an Xθ-stage and a shaking table. The static experiment verified that the sensor could measure the local inclination angle as well as the lateral displacement. The dynamic experiment revealed that the accuracy of the sensor was 150 μm in the relative-displacement measurement and 100 μrad in the inclination angle measurement. These results indicate that the proposed sensor system has sufficient accuracy for the measurement of relative-story displacement in response to the seismic vibration.

Improving zero-mode waveguide structure for enhancing signal-to-noise ratio of real-time single-molecule fluorescence imaging: a computational study.

Tanii Takashi;Akahori Rena;Higano Shun;Okubo Kotaro;Yamamoto Hideaki;Ueno Taro;Funatsu Takashi

Improving zero-mode waveguide structure for enhancing signal-to-noise ratio of real-time single-molecule fluorescence imaging: a computational study. 88(1) 2013-2013

Detail

ISSN:1550-2376

Outline::We investigated the signal-to-noise ratio (S/N) of real-time single-molecule fluorescence imaging (SMFI) using zero-mode waveguides (ZMWs). The excitation light and the fluorescence propagating from a molecule in the ZMW were analyzed by computational optics simulation. The dependence of the S/N on the ZMW structure was investigated with the diameter and etching depth as the simulation parameters. We found that the SMFI using a conventional ZMW was near the critical level for detecting binding and dissociation events. We show that etching the glass surface of the ZMW by 60 nm enhances the S/N six times the conventional nonetched ZMWs. The enhanced S/N improves the temporal resolution of the SMFI at physiological concentrations.

In situ modification of cell-culture scaffolds by photocatalytic decomposition of organosilane monolayers.

Yamamoto Hideaki;Demura Takanori;Morita Mayu;Kono Sho;Sekine Kohei;Shinada Takahiro;Nakamura Shun;Tanii Takashi

In situ modification of cell-culture scaffolds by photocatalytic decomposition of organosilane monolayers. 6(3) 2014-2014

DOI

Detail

ISSN:1758-5090

Outline::We demonstrate a novel application of TiO2 photocatalysis for modifying the cell affinity of a scaffold surface in a cell-culture environment. An as-deposited octadecyltrichlorosilane self-assembled monolayer (OTS SAM) on TiO2 was found to be hydrophobic and stably adsorbed serum albumins that blocked subsequent adsorption of other proteins and cells. Upon irradiation of ultraviolet (UV) light, OTS molecules were decomposed and became permissive to the adhesion of PC12 cells via adsorption of an extracellular matrix protein, collagen. Optimal UV dose was 200 J cm(-2) for OTS SAM on TiO2. The amount of collagen adsorption decreased when excessive UV light was irradiated, most likely due to the surface being too hydrophilic to support its adsorption. This UV-induced modification required TiO2 to be present under the SAM and hence is a result of TiO2 photocatalysis. The UV irradiation for surface modification can be performed before cell plating or during cell culture. We also demonstrate that poly(ethylene glycol) SAM can also be patterned with this method, indicating that it is applicable to both hydrophobic and hydrophilic SAMs. This method provides a unique tool for fabricating cell microarrays and studying dynamical properties of living cells.

Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond.

Liu Yan;Chen Gengxu;Rong Youying;McGuinness Liam Paul;Jelezko Fedor;Tamura Syuto;Tanii Takashi;Teraji Tokuyuki;Onoda Shinobu;Ohshima Takeshi;Isoya Junichi;Shinada Takahiro;Wu E;Zeng Heping

Scientific reports 52015-2015

PubMedDOI

Detail

ISSN:2045-2322

Outline::Single-photon emitters with stable and uniform photoluminescence properties are important for quantum technology. However, in many cases, colour centres in diamond exhibit spectral diffusion and photoluminescence intensity fluctuation. It is therefore essential to investigate the dynamics of colour centres at the single defect level in order to enable the on-demand manipulation and improved applications in quantum technology. Here we report the polarization switching, intensity jumps and spectral shifting observed on a negatively charged single silicon-vacancy colour centre in diamond. The observed phenomena elucidate the single emitter dynamics induced by photoionization of nearby electron donors in the diamond.

Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond

Liu, Yan; Chen, Gengxu; Rong, Youying; McGuinness, Liam Paul; Jelezko, Fedor; Tamura, Syuto; Tanii, Takashi; Teraji, Tokuyuki; Onoda, Shinobu; Ohshima, Takeshi; Isoya, Junichi; Shinada, Takahiro; Wu, E.; Zeng, Heping

Scientific Reports 52015/07-2015/07

DOIScopus

Detail

Outline:Single-photon emitters with stable and uniform photoluminescence properties are important for quantum technology. However, in many cases, colour centres in diamond exhibit spectral diffusion and photoluminescence intensity fluctuation. It is therefore essential to investigate the dynamics of colour centres at the single defect level in order to enable the on-demand manipulation and improved applications in quantum technology. Here we report the polarization switching, intensity jumps and spectral shifting observed on a negatively charged single silicon-vacancy colour centre in diamond. The observed phenomena elucidate the single emitter dynamics induced by photoionization of nearby electron donors in the diamond.

Photopatterning proteins and cells in aqueous environment using TiO2 photocatalysis

Yamamoto, Hideaki; Yamamoto, Hideaki; Demura, Takanori; Sekine, Kohei; Kono, Sho; Niwano, Michio; Niwano, Michio; Hirano-Iwata, Ayumi; Hirano-Iwata, Ayumi; Tanii, Takashi

Journal of Visualized Experiments 2015(104) 2015/10-2015/10

DOIScopus

Detail

ISSN:1940087X

Outline:© 2015 Journal of Visualized Experiments.Organic contaminants adsorbed on the surface of titanium dioxide (TiO2) can be decomposed by photocatalysis under ultraviolet (UV) light. Here we describe a novel protocol employing the TiO2 photocatalysis to locally alter cell affinity of the substrate surface. For this experiment, a thin TiO2 film was sputter-coated on a glass coverslip, and the TiO2 surface was subsequently modified with an organosilane monolayer derived from octadecyltrichlorosilane (OTS), which inhibits cell adhesion. The sample was immersed in a cell culture medium, and focused UV light was irradiated to an octagonal region. When a neuronal cell line PC12 cells were plated on the sample, cells adhered only on the UV-irradiated area. We further show that this surface modification can also be performed in situ, i.e., even when cells are growing on the substrate. Proper modification of the surface required an extracellular matrix protein collagen to be present in the medium at the time of UV irradiation. The technique presented here can potentially be employed in patterning multiple cell types for constructing coculture systems or to arbitrarily manipulate cells under culture.

Neuraminidase-dependent degradation of polysialic acid is required for the lamination of newly generated neurons

Sajo, Mari; Sugiyama, Hiroki; Yamamoto, Hideaki; Tanii, Takashi; Matsuki, Norio; Ikegaya, Yuji; Koyama, Ryuta

PLoS ONE 11(1) 2016/01-2016/01

DOIScopus

Detail

Outline:© 2016 Sajo et al. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.Hippocampal granule cells (GCs) are generated throughout the lifetime and are properly incorporated into the innermost region of the granule cell layer (GCL). Hypotheses for the well-regulated lamination of newly generated GCs suggest that polysialic acid (PSA) is present on the GC surface to modulate GC-to-GC interactions, regulating the process of GC migration; however, direct evidence of this involvement is lacking. We show that PSA facilitates the migration of newly generated GCs and that the activity of N-acetyl-α-neuraminidase 1 (NEU1, sialidase 1) cleaves PSA from immature GCs, terminating their migration in the innermost GCL. Developing a migration assay of immature GCs in vitro, we found that the pharmacological depletion of PSA prevents the migration of GCs, whereas the inhibition of PSA degradation with a neuraminidase inhibitor accelerates this migration. We found that NEU1 is highly expressed in immature GCs. The knockdown of NEU1 in newly generated GCs in vivo increased PSA presence on these cells, and attenuated the proper termination of GC migration in the innermost GCL. In conclusion, this study identifies a novel mechanism that underlies the proper lamination of newly generated GCs through the modulation of PSA presence by neuronal NEU1.

Quantitative Evaluation of Cancer Cell Adhesion to Self-Assembled Monolayer-Patterned Substrates by Reflection Interference Contrast Microscopy

Matsuzaki, Takahisa; Ito, Kosaku; Masuda, Kentaro; Kakinuma, Eisuke; Sakamoto, Rumi; Iketaki, Kentaro; Yamamoto, Hideaki; Suganuma, Masami; Kobayashi, Naritaka; Nakabayashi, Seiichiro; Tanii, Takashi; Yoshikawa, Hiroshi Y.

Journal of Physical Chemistry B 120(7) p.1221 - 12272016/02-2016/02

DOIScopus

Detail

ISSN:15206106

Outline:© 2016 American Chemical Society.Adhesion of cancer cells with different metastatic potential and anticancer drug resistance has been quantitatively evaluated by using self-assembled monolayer (SAM)-patterned substrates and reflection interference contrast microscopy (RICM). Cell-adhesive SAM spots with optimized diameter could prevent cell-cell adhesion and thus allowed the systematic evaluation of statistically reliable numbers of contact area between single cancer cells and substrates by RICM. The statistical image analysis revealed that highly metastatic mouse melanoma cells showed larger contact area than lowly metastatic cells. We also found that both cancer cell types exhibited distinct transition from the "strong" to "weak" adhesion states with increase in the concentration of (-)-epigallocatechin gallate (EGCG), which is known to exhibit cancer preventive activity. Mathematical analysis of the adhesion transition revealed that adhesion of the highly metastatic mouse melanoma cells showed more EGCG tolerance than that of lowly metastatic cells. Moreover, time-lapse RICM observation revealed that EGCG weakened cancer cell adhesion in a stepwise manner, probably via focal adhesion complex. These results clearly indicate that contact area can be used as a quantitative measure for the determination of cancer phenotypes and their drug resistance, which will provide physical insights into the mechanism of cancer metastasis and cancer prevention.

Investigation of the silicon vacancy color center for quantum key distribution

Liu, Yan; Siyushev, Petr; Rong, Youying; Wu, Botao; McGuinness, Liam Paul; Jelezko, Fedor; Tamura, Syuto; Tanii, Takashi; Teraji, Tokuyuki; Onoda, Shinobu; Ohshima, Takeshi; Isoya, Junichi; Shinada, Takahiro; Zeng, Heping; Wu, E.

Optics Express 23(26) 2015/12-2015/12

DOIScopus

Detail

Outline:© 2015 Optical Society of America.Single photon sources (SPS) are crucial for quantum key distribution. Here we demonstrate a stable triggered SPS at 738 nm with linewidth less than 5 nm at room temperature based on a negatively charged single silicon vacancy color center. Thanks to the short photon duration of about 1.3-1.7 ns, by using high repetition pulsed excitation at 30 MHz, the triggered single photon source generates16.6 kcounts/s. And we discuss the feasibility of this triggered SPS in the application of quantum key distribution.

Opportunity of single atom control for quantum processing in silicon and diamond

Shinada, Takahiro; Enrico, Prati; Tamura, Syuto; Tanii, Takashi; Teraji, Tokuyuki; Onoda, Shinobu; Ohshima, Takeshi; McGuinness, Liam P.; Rogers, Lachlan; Naydenov, Boris; Jelezko, Fedor; Isoya, Junichi

2014 Silicon Nanoelectronics Workshop, SNW 2014 2015/12-2015/12

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Outline:© 2014 IEEE.Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.

Quantitative comparison of cancer and normal cell adhesion using organosilane monolayer templates: an experimental study on the anti-adhesion effect of green-tea catechins

Sakamoto, Rumi; Kakinuma, Eisuke; Masuda, Kentaro; Takeuchi, Yuko; Ito, Kosaku; Iketaki, Kentaro; Matsuzaki, Takahisa; Nakabayashi, Seiichiro; Yoshikawa, Hiroshi Y.; Yamamoto, Hideaki; Yamamoto, Hideaki; Sato, Yuko; Sato, Yuko; Tanii, Takashi; Tanii, Takashi

In Vitro Cellular and Developmental Biology - Animal 52(8) p.799 - 8052016/09-2016/09

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ISSN:10712690

Outline:© 2016, The Society for In Vitro Biology.The main constituent of green tea, (−)-Epigallocatechin-3-O-gallate (EGCG), is known to have cancer-specific chemopreventive effects. In the present work, we investigated how EGCG suppresses cell adhesion by comparing the adhesion of human pancreatic cancer cells (AsPC-1 and BxPC-3) and their counterpart, normal human embryonic pancreas-derived cells (1C3D3), in catechin-containing media using organosilane monolayer templates (OMTs). The purpose of this work is (1) to evaluate the quantitativeness in the measurement of cell adhesion with the OMT and (2) to show how green-tea catechins suppress cell adhesion in a cancer-specific manner. For the first purpose, the adhesion of cancer and normal cells was compared using the OMT. The cell adhesion in different type of catechins such as EGCG, (−)-Epicatechin-3-O-gallate (ECG) and (−)-Epicatechin (EC) was also evaluated. The measurements revealed that the anti-adhesion effect of green-tea catechins is cancer-specific, and the order is EGCG≫ECG>EC. The results agree well with the data reported to date, showing the quantitativeness of the new method. For the second purpose, the contact area of cells on the OMT was measured by reflection interference contrast microscopy. The cell-OMT contact area of cancer cells decreases with increasing EGCG concentration, whereas that of normal cells remains constant. The results reveal a twofold action of EGCG on cancer cell adhesion—suppressing cell attachment to a candidate adhesion site and decreasing the contact area of the cells—and validates the use of OMT as a tool for screening cancer cell adhesion.

Size-dependent regulation of synchronized activity in living neuronal networks

Yamamoto, Hideaki; Kubota, Shigeru; Chida, Yudai; Morita, Mayu; Moriya, Satoshi; Akima, Hisanao; Sato, Shigeo; Hirano-Iwata, Ayumi; Tanii, Takashi; Niwano, Michio

Physical Review E - Statistical, Nonlinear, and Soft Matter Physics 94(1) 2016/07-2016/07

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ISSN:15393755

Outline:© 2016 American Physical Society.We study the effect of network size on synchronized activity in living neuronal networks. Dissociated cortical neurons form synaptic connections in culture and generate synchronized spontaneous activity within 10 days in vitro. Using micropatterned surfaces to extrinsically control the size of neuronal networks, we show that synchronized activity can emerge in a network as small as 12 cells. Furthermore, a detailed comparison of small (∼20 cells), medium (∼100 cells), and large (∼400 cells) networks reveal that synchronized activity becomes destabilized in the small networks. A computational modeling of neural activity is then employed to explore the underlying mechanism responsible for the size effect. We find that the generation and maintenance of the synchronized activity can be minimally described by: (1) the stochastic firing of each neuron in the network, (2) enhancement in the network activity in a positive feedback loop of excitatory synapses, and (3) Ca-dependent suppression of bursting activity. The model further shows that the decrease in total synaptic input to a neuron that drives the positive feedback amplification of correlated activity is a key factor underlying the destabilization of synchrony in smaller networks. Spontaneous neural activity plays a critical role in cortical information processing, and our work constructively clarifies an aspect of the structural basis behind this.

Live-cell, label-free identification of GABAergic and non-GABAergic neurons in primary cortical cultures using micropatterned surface

Kono, Sho; Kono, Sho; Yamamoto, Hideaki; Kushida, Takatoshi; Hirano-Iwata, Ayumi; Niwano, Michio; Tanii, Takashi

PLoS ONE 11(8) 2016/08-2016/08

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Outline:© 2016 Kono et al. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.Excitatory and inhibitory neurons have distinct roles in cortical dynamics. Here we present a novel method for identifying inhibitory GABAergic neurons from non-GABAergic neurons, which are mostly excitatory glutamatergic neurons, in primary cortical cultures. This was achieved using an asymmetrically designed micropattern that directs an axonal process to the longest pathway. In the current work, we first modified the micropattern geometry to improve cell viability and then studied the axon length from 2 to 7 days in vitro (DIV). The cell types of neurons were evaluated retrospectively based on immunoreactivity against GAD67, a marker for inhibitory GABAergic neurons. We found that axons of non-GABAergic neurons grow significantly longer than those of GABAergic neurons in the early stages of development. The optimal threshold for identifying GABAergic and non-GABAergic neurons was evaluated to be 110 μm at 6 DIV. The method does not require any fluorescence labelling and can be carried out on live cells. The accuracy of identification was 98.2%. We confirmed that the high accuracy was due to the use of a micropattern, which standardized the development of cultured neurons. The method promises to be beneficial both for engineering neuronal networks in vitro and for basic cellular neuroscience research.

Identification of yield drift deformations and evaluation of the degree of damage through the direct sensing of drift displacements

Xiang, Ping; Nishitani, Akira; Marutani, Shohei; Kodera, Kenzo; Hatada, Tomohiko; Katamura, Ryuta; Kanekawa, Kiyoshi; Tanii, Takashi

Earthquake Engineering and Structural Dynamics 45(13) p.2085 - 21022016/10-2016/10

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ISSN:00988847

Outline:Copyright © 2016 John Wiley & Sons, Ltd.Inter-story drift displacement data can provide useful information for story damage assessment. The authors' research group has developed photonic-based sensors for the direct measurement of inter-story drift displacements. This paper proposes a scheme for evaluating the degree of damage in a building structure based on drift displacement sensing. The scheme requires only measured inter-story drift displacements without any additional finite element analysis. A method for estimating yield drift deformation is proposed, and then, the degree of beam end damage is evaluated based on the plastic deformation ratios derived with the yield drift deformation values estimated by the proposed method. The validity and effectiveness of the presented scheme are demonstrated via experimental data from a large-scale shaking table test of a one-third-scale model of an 18-story steel building structure conducted at E-Defense. Copyright © 2016 John Wiley & Sons, Ltd.

Deterministic doping to silicon and diamond materials for quantum processing

Shinada, Takahiro; Prati, Enrico; Tanii, Takashi; Teraji, Tokuyuki; Onoda, Shinobu; Jelezko, Fedor; Isoya, Junnichi

16th International Conference on Nanotechnology - IEEE NANO 2016 p.888 - 8902016/11-2016/11

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Outline:© 2016 IEEE.Nanoscale electronic devices will require the placement of dopants in a predetermined location, namely, a single atom control to explore novel functions for future nanoelectronics. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.

Charge state stabilization of shallow nitrogen vacancy centers in diamond by oxygen surface modification

Yamano, Hayate; Kawai, Sora; Kato, Kanami; Kageura, Taisuke; Inaba, Masafumi; Okada, Takuma; Higashimata, Itaru; Haruyama, Moriyoshi; Haruyama, Moriyoshi; Tanii, Takashi; Yamada, Keisuke; Onoda, Shinobu; Kada, Wataru; Hanaizumi, Osamu; Teraji, Tokuyuki; Isoya, Junichi; Kawarada, Hiroshi; Kawarada, Hiroshi

Japanese Journal of Applied Physics 56(4) 2017/04-2017/04

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ISSN:00214922

Outline:© 2017 The Japan Society of Applied Physics. We investigated the charge state stability and coherence properties of near-surface single nitrogen vacancy (NV) centers in 12C-enriched diamond for potential use in nanoscale magnetic field sensing applications. The stability of charge states in negatively charged NV centers (NV-) was evaluated using one of the pulsed optically detected magnetic resonance measurements, Rabi oscillation measurements. During the accumulation of Rabi oscillations, an unstable shallow NV- was converted to a neutral state. As a result, the contrast of Rabi oscillations degraded, depending on charge state stability. We stabilized the NV- state of very shallow NV centers (∼2.6 ± 1.1nm from the surface) created by 1.2 keV nitrogen ion implantation by diamond surface modification, UV/ozone exposure, and oxygen annealing. This improvement indicates that we can suppress the upward surface band bending and surface potential fluctuations through Fermi level pinning originating from oxygen-terminated diamond surfaces.

Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

Kageura, Taisuke; Kato, Kanami; Yamano, Hayate; Suaebah, Evi; Kajiya, Miki; Kawai, Sora; Inaba, Masafumi; Tanii, Takashi; Haruyama, Moriyoshi; Haruyama, Moriyoshi; Yamada, Keisuke; Onoda, Shinobu; Kada, Wataru; Hanaizumi, Osamu; Teraji, Tokuyuki; Isoya, Junichi; Kono, Shozo; Kawarada, Hiroshi; Kawarada, Hiroshi

Applied Physics Express 10(5) 2017/05-2017/05

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ISSN:18820778

Outline:© 2017 The Japan Society of Applied Physics. A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV% centers near the surface compared with the states obtained for alternatively terminated surfaces.

1.54 μm photoluminescence from Er:Oxcenters at extremely low concentration in silicon at 300 K

Celebrano, Michele; Ghirardini, Lavinia; Finazzi, Marco; Shimizu, Yasuo; Tu, Yuan; Inoue, Koji; Nagai, Yasuyoshi; Shinada, Takahiro; Chiba, Yuki; Abdelghafar, Ayman; Yano, Maasa; Tanii, Takashi; Prati, Enrico

Optics Letters 42(17) p.3311 - 33142017/09-2017/09

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ISSN:01469592

Outline:© 2017 Optical Society of America. The demand for single photon emitters at λ = 1.54 μm, which follows from the consistent development of quantum networks based on optical fiber technologies, makes Er:O x centers in Si a viable resource, thanks to the 4 I 13/2 → 4 I 15/2 optical transition of Er 3+ . While its implementation in high-power applications is hindered by the extremely low emission rate, the study of such systems in the low concentration regime remains relevant for quantum technologies. In this Letter, we explore the room-temperature photoluminescence at the telecomm wavelength from very low implantation doses of Er:O x in Si. The lower-bound number of optically active Er atoms detected is of the order of 10 2 , corresponding to a higher-bound value for the emission rate per individual ion of about 10 4 s −1 .

Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures

Tu, Y.; Han, B.; Shimizu, Y.; Inoue, K.; Fukui, Y.; Yano, M.; Tanii, T.; Shinada, T.; Nagai, Y.

Nanotechnology 28(38) 2017/08-2017/08

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Detail

ISSN:09574484

Outline:© 2017 IOP Publishing Ltd. Ion implantation through nanometer-scale apertures (nano-apertures) is a promising method to precisely position ions in silicon matrices, which is a requirement for next generation electronic and quantum computing devices. This paper reports the application of atom probe tomography (APT) to investigate the three-dimensional distribution of germanium atoms in silicon after implantation through nano-aperture of 10 nm in diameter, for evaluation of the amount and spatial distribution of implanted dopants. The experimental results obtained by APT are consistent with a simple simulation with consideration of several effects during lithography and ion implantation, such as channeling and resist flow.

In situ modification of cell-culture scaffolds by photocatalysis of visible-light-responsive TiO2film

Kono, Sho; Kono, Sho; Furusawa, Kohei; Kurotobi, Atsushi; Hattori, Kohei; Yamamoto, Hideaki; Hirano-Iwata, Ayumi; Hirano-Iwata, Ayumi; Tanii, Takashi

Japanese Journal of Applied Physics 57(2) 2018/02-2018/02

DOIScopus

Detail

ISSN:00214922

Outline:© 2018 The Japan Society of Applied Physics. We propose a novel process to modify the cell affinity of scaffolds in a cell-culture environment using the photocatalytic activity of visible-light (VL)-responsive TiO 2 . The proposed process is the improved version of our previous demonstration in which ultraviolet (UV)-responsive TiO 2 was utilized. In that demonstration, we showed that cell-repellent molecules on TiO 2 were decomposed and replaced with cell-permissive molecules upon UV exposure in the medium where cells are being cultured. However, UV irradiation involves taking the risk of inducing damage to the cells. In this work, a TiO 2 film was sputter-deposited on a quartz coverslip at 640 °C without O 2 gas injection to create a rutile structure containing oxygen defects, which is known to exhibit photocatalytic activity upon VL exposure. We show that the cell adhesion site and migration area can be controlled with the photocatalytic activity of the VL-responsive TiO 2 film, while the cellular oxidative stress is reduced markedly by the substitution of VL for UV.

PerformanceevaluationofMOSFETswithdiscretedopantdistributionbyone-by-onedopingmethod

T.Shinada,M.Hori,Y.Ono,K.Taira,A.Komatsubara,T.Tanii,T.Endoh,I.Ohdomari

Proc.SPIEAdvancedLithography,2010

Developmentofnoncontact-typerelativestorydisplacementmonitoringsystem

I.Matsuya,R.Tomishi,M.Sato,K.Kanekawa,M.Takahashi,S.Miura,Y.Suzuki,T.Hatada,M.Oshio,R.Katamura,Y.Nitta,T.Tanii,S.Shoji,A.Nishitani,andI.Ohdomari

ProceedingsofThe5thANCRiSST,2010,550

MeasurementofRelativeStoryDisplacementsbyNoncontact-TypeSensorsonForcedVibrationTestofanActualBuilding

T.Hatada,M.Takahashi,Y.Suzuki,I.Matsuya,K.Kanekawa,Y.Nitta,A.Nishitani

JournalofStructuralandConstructionEngineering,AIJ,2010,75(2010)1257

Single-moleculestudyonthedecayprocessofthefootball-shapedGroEL-GroEScomplexusingzero-modewaveguides

T.Sameshima,R.Iizuka,T.Ueno,J.Wada,M.Aoki,N.Shimamoto,I.Ohdomari,T.Tanii,T.Funatsu

TheJournalofBiologicalChemistry285(2010)23159

MeasurementofActualBuildingMotionsonForcedVibrationTestbyNoncontact-TypeRelativeStoryDisplacementSensors

T.Hatada,M.Takahashi,R.Katamura,Y.Suzuki,I.Matsuya,K.Kanekawa,Y.NittaandA.Nishitani

2010,proceedingsofFifthWorldStructuralControlandMonitoring

Quantumtransportindeterministicallyimplantedsingle-donorsinSiFETs

T.Shinada,M.Hori,F.Guagliardo,G.Ferrari,A.Komatubara,K.Kumagai,T.Tanii,T.Endo,Y.OnoandE.Prati

IEDMTech.Dig.(2011)697-700

Developmentof5-DOFRelative-StoryDisplacementSensorforStructuralHealthMonitoring

I.Matsuya,R.Katamura,M.Iba,H.Kondo,K.Kanekawa,T.Hatada,Y.Nitta,T.Tanii,S.Shoji,A.Nishitani,I.Ohdomari

TransactionsoftheJapanSocietyofMechanicalEngineersC78,(2012)1451-1459

Reductionofthresholdvoltagefluctuationinfield-effecttransistorsbycontrollingindividualdopantposition

M.Hori,K.Taira,A.Komatsubara,K.Kumagai,Y.Ono,T.Tanii,T.Endoh,T.Shinada

Appl.Phys.Lett.101,013503(2012).

Anderson-Motttransitioninarraysofafewdopantatomsinasilicontransistor

E.Prati,M.Hori,F.Guagliardo,G.Ferrari,T.Shinada

NatureNano.7,pp443-447(2012).*The2ndauthorwasaposdocoftheTANIIresearchgroup

Differentialneuriteoutgrowthisrequiredforaxonspecificationbyculturedhippocampalneurons

H.Yamamoto,T.Demura,M.Morita,G.Banker,T.Tanii,S.Nakamura

JournalofNeurochemistry123(2012)904-910.

Improvingzero-modewaveguidestructureforenhancingsignal-to-noiseratioofreal-timesingle-moleculefluorescenceimaging

T.Tanii,R.Akahori,S.Higano,K.Okubo,H.Yamamoto,T.Ueno,andT.Funatsu

Acomputationalstudy,Phys.Rev.E88(2013)012727.

AnExperimentalStudyonSimultaneousMeasurementofRelativeDisplacementandLocalInclinationAngle

I.Matsuya,K.Katamura,K.Ihara,T.Tanii,Y.Nitta,A.Nishitani

AIJJ.Technol.Des.19(2013)951-954.

Insitumodificationofcell-culturescaffoldsbyphotocatalyticdecompositionoforganosilanemonolayers

HideakiYamamoto,TakanoriDemura,MayuMorita,ShoKono,KoheiSekine,TakahiroShinada,ShunNakamura,TakashiTanii

Biofabrication6(2014)035021(8pp).

Arrayofbrightsilicon-vacancycentersindiamondfabricatedbylow-energyfocusedionbeamimplantation

SyutoTamura,GodaiKoike,AkiraKomatsubara,TokuyukiTeraji,ShinobuOnoda,LiamP.McGuinness,LachlanRogers,BorisNaydenov,E.Wu,LiuYan,FedorJelezko,TakeshiOhshima,JunichiIsoya,TakahiroShinada,andTakashiTanii

Appl.Phys.Express7,115201(2014).

SurfaceModificationofCellScaffoldinAqueousSolutionUsingTiO2PhotocatalysisandLinkerProteinL2forPatterningPrimaryNeurons

KoheiSekine,HideakiYamamoto,ShoKono,TakeshiIkeda,AkioKuroda,TakashiTanii

e-JournalofSurfaceScienceandNanotechnologyVol.13,213-218(2015).

FluorescencePolarizationSwitchingfromaSingleSiliconVacancyColourCentreinDiamond

Tamura,TakashiTanii,TokuyukiTeraji,ShinobuOnoda,TakeshiOhshima,JunichiIsoya,TakahiroShinada,EWu,HepingZeng

ScientificReports5,12244(2015).

Driftdisplacementdatabasedestimationofcumulativeplasticdeformationratiosforbuildings

A.Nishitani,C.Matsui,Y.Hara,P.Xiang,Y.Nitta,T.Hatada,R.Katamura,I.Matsuya,T.Tanii

SmartStructuresandSystems15,881(2015).

PhotopatterningProteinsandCellsinAqueousEnvironmentusingTiO2Photocatalysis

H.Yamamoto,T.Demura,K.Sekine,S.Kono,M.Niwano,A.Hirano-Iwata,T.Tanii

JournalofVisualizedExperiments104(2015)

Neuraminidase-dependentDegradationofPolysialicAcidIsRequiredfortheLaminationofNewlyGeneratedNeurons

M.Sajo,H.Sugiyama,H.Yamamoto,T.Tanii,N.Matsuki,Y.Ikegaya,R.Koyama

PLOSONE11(2016)e0146398.

QuantitativeEvaluationofCancerCellAdhesiontoSelf-AssembledMonolayer-PatternedSubstratesbyReflectionInterferenceContrastMicroscopy,

T.Matsuzaki,K.Ito,K.Masuda,E.Kakinuma,R.Sakamoto,K.Iketaki,H.Yamamoto,M.Suganuma,N.Kobayashi,S.Nakabayashi,T.Tanii,H.Yoshikawa

J.Phys.Chem.B120(2016)1221.

Quantitativecomparisonofcancerandnormalcelladhesionusingorganosilanemonolayertemplates:Anexperimentalstudyontheanti-adhesioneffectofgreen-teacatechins

R.Sakamoto,E.Kakinuma,K.Masuda,Y.Takeuchi,K.Ito,K.Iketaki,T.Matsuzaki,S.Nakabayashi,H.Y.Yoshikawa,H.Yamamoto,Y.Sato,T.Tanii

InVitroCell.Dev.Biol.-Animal52(2016)799-805.

光触媒作用を用いた液中表面改質による培養神経細胞の操作

山本英明,平野愛弓,谷井孝至,庭野道夫

表面科学37,224-229(2016).

Deterministicdopingtosiliconanddiamondmaterialsforquantumprocessing.InNanotechnology(IEEE-NANO)

Shinada,T.Prati,E.Tanii,T.Teraji,T.Onoda,S.Jelezko,F.&Isoya,J.(2016,August).

2016IEEE16thInternationalConferenceon(pp.888-890).IEEE.

"Size-dependentregulationofsynchronizedactivityinlivingneuronalnetworks"

H.Yamamoto,S.Kubota,Y.Chida,M.Morita,S.Moriya,H.Akima,S.Sato,A.Hirano-Iwata,T.Tanii,M.Niwano

Phys.Rev.E94(2016)012407.

"Live-cell,label-freeidentificationofGABAergicandnon-GABAergicneuronsinprimarycorticalculturesusingmicropatternedsurface"

S.Kono,H.Yamamoto,T.Kushida,A.Hirano-Iwata,M.Niwano,T.Tanii

PLOSONE11(2016)e0160987.

Identificationofyielddriftdeformationsandevaluationofthedegreeofdamagethroughthedirectsensingofdriftdisplacements

P.Xiang,A.Nishitani,S.Marutani,K.Kodera,T.Hatada,R.Katamura,K.Kanekawa,T.Tanii

EARTHQUAKEENGINEERING&STRUCTURALDYNAMICS45(2016)2085-2102.

Effectofaradicalexposurenitridationsurfaceonthechargestabilityofshallownitrogen-vacancycentersindiamond

T.Kageura,K.Kato,H.Yamano,E.Suaebah,M.Kajiya,S.Kawai,M.Inaba,T.Tanii,M.Haruyama,K.Yamada,S.Onoda,W.Kada,O.Hanaizumi,T.Teraji,J.Isoya,S.Kono,H.Kawarada

Phys.Express10(2017)055503

Atomprobetomographicassessmentofthedistributionofgermaniumatomsimplantedinasiliconmatrixthroughnano-apertures

Y.Tu,B.Han,Y.Shimizu,K.Inoue,Y.Fukui,M.Yano,T.Tanii,T.Shinada,Y.Nagai

Nanotechnology28(2017)385301.

Room-temperature1.54ƒÊmphotoluminescencefromEr:Oxcentersatextremelylowconcentrationinsilicon

M.Celebrano,L.Ghirardini,M.Finazzi,Y.Shimizu,Y.Tu,K.Inoue,Y.Nagai,T.Shinada,Y.Chiba,A.Abderghafar,M.Yano,T.Tanii,E.Prati

Opt.Lett.42(2017)3311.

Insitumodificationofcell-culturescaffoldsbyphotocatalysisofvisible-light-responsiveTiO2film

S.Kono,K.Furusawa,A.Kurotobi,K.Hattori,H.Yamamoto,A.Hirano-Iwata,T.Tanii

Jpn.J.Appl.Phys.57(2018)027001,1-5.

LithographicallyEngineeredShallowNitrogen-VacancyCentersinDiamondforExternalNuclearSpinSensing

R.Fukuda,P.Balasubramanian,I.Higashimata,G.Koike,T.Okada,R.Kagami,T.Teraji,S.Onoda,M.Haruyama,K.Yamada,M.Inaba,H.Yamano,F.Stürner,S.Schmitt,L.P.McGuinness,F.Jelezko,T.Ohshima,T.Shinada,H.Kawarada,W.Kada,O.Hanaizumi,T.Tanii,J.Isoya

New.J.Phys.20(2018)083029

Impact of modular organization on dynamical richness in cortical networks

H. Yamamoto, S. Moriya, K. Ide, T. Hayakawa, H. Akima, S. Sato, S. Kubota, T. Tanii, M. Niwano, S. Teller, J. Soriano, A. Hirano-Iwata

Science Advances 4 (2018) eaau4914

GeVn complexes for silicon-based room-temperature single-atom nanoelectronics

S. Achilli, N. Manini, G. Onida, T. Shinada, T. Tanii, E. Prati

Sci. Rep. 8 (2018) 18054

Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers

S. Kawai, H. Yamano, T. Sonoda, K. Kato, J. Buendia, T. Kageura, R. Fukuda, T. Okada, T. Tanii, T. Higuchi, M. Haruyama, K. Yamada, S. Onoda, T. Ohshima, W. Kada, O. Hanaizumi, A. Stacey, T. Teraji, S. Kono, J. Isoya, H. Kawarada

J. Phys. Chem. C 123 (2019) 3594

Room Temperature Resonant Photocurrent in an Erbium Low-doped Silicon Transistor at Telecom Wavelength

M. Celebrano, L. Ghirardini, M. FInazzi, G. Ferrari, Y. Chiba, A. Abdelghafar, M. Yano, T. Shinada, T. Tanii, E. Prati

Nanomaterials 9 (2019) 416

Books And Publication

実験化学講座

2004-

ナノテクノロジー大辞典

2004-

シングルイオン注入法を用いたナノスケール表面改質

2002-

とことんやさしいナノテクノロジー

2001-

図解 ナノテクノロジーのすべて

2001-

Lecture And Oral

An Experimental Study on Relative Displacement Direct Sensing in Real-Time using Phototransistor Array for Building Structures

I. Matusya

2010/07/13

Enhancement of Electron Transport Property in FET with Asymmetric Ordered Dopant Distribution

M.Hori, T.Shinada,K. Taira, T.Tanii, Y.Ono, T.Endoh,I.Ohdomari

2010/06/07

Patent

Reference Number:286

繊維状カーボンの形態・位置制御方法、その方法を用いて位置制御された繊維状カーボン(日本)

大泊 巌, 品田 賢宏, 谷井 孝至

2003-157277、2004-359478

Reference Number:557

微小開口膜、生体分子間相互作用解析方法及びその装置(日本)

谷井 孝至, 島本 直伸, 大泊 巌, 上野 太郎, 船津 高志

2006-015559、2007-198801

Reference Number:795

検出装置及び検出方法(日本)

谷井 孝至, 金川 清, 大泊 巌

2008-057246、2009-216402、5188844

Reference Number:933

変位計測システムを用いた建築物の施工管理方法(日本)

谷井 孝至, 松谷 巌, 大泊 巌, 西谷 章, 庄子 習一, 仁田 佳宏, 金川 清

2009-043798、2010-197282、5137875

Reference Number:942

傾斜角度測定器(日本)

庄子 習一, 谷井 孝至, 大泊 巌, 西谷 章, 仁田 佳宏, 金川 清, 松谷 巌, 冨士 良太

2009-223380、2011- 69798

Reference Number:975

変位計測装置、及び変位計測方法(日本)

谷井 孝至, 金川 清, 松谷 巌, 大泊 巌, 西谷 章, 庄子 習一, 仁田 佳宏

2009-157380、2011- 13095

Reference Number:1025

変位計測装置(日本)

松谷 巌, 大泊 巌, 西谷 章, 庄子 習一, 谷井 孝至, 仁田 佳宏, 金川 清

2010-071368、2011-203150、5544619

Reference Number:1026

変位計測装置(日本)

谷井 孝至, 仁田 佳宏, 金川 清, 松谷 巌, 大泊 巌, 西谷 章, 庄子 習一

2010-101740、2011-232123、5610427

Research Grants & Projects

Grant-in-aids for Scientific Research Adoption Situation

Research Classification:

Development of novel techniques for single-molecule fluorescence imaging of various biomolecules

2014/-0-2017/-0

Allocation Class:¥5200000

Research Classification:

Control of quantum material properties by deterministic doping method

2013/-0-2017/-0

Allocation Class:¥17290000

Research Classification:

In-Situ Single-Molecule Fluorescence Imaging of Membrane Protein Interaction Using Nano-Structured Glass Plate

2008/-0-2013/-0

Allocation Class:¥18980000

Research Classification:

Real-Time Scanning Tunneling Microscopy of Nano-Scale Surface Modification by Dopant Ion Irradiation

Allocation Class:¥18070000

Research Classification:

Development of single dopant circuit by deterministic doping and application to stochastic processing

2018/-0-2023/-0

Allocation Class:¥43940000

Research Classification:

Development of a fluorescence correlation spectroscopy for rotational diffusion measurements

2014/-0-2017/-0

Allocation Class:¥4030000

Research Classification:

Realization of several-qubit quantum register by fabrication of nanoscale-array of NV centers in diamond

2014/-0-2017/-0

Allocation Class:¥40300000

On-campus Research System

Special Research Project

量子情報通信のためのケイ素-空孔対ダイヤモンド単一光子源の作製

2014

Research Results Outline:集束イオンビーム装置を用いて単結晶ダイヤモンド薄膜にSi原子を打ち込み、Siと空孔からなる色中心であるSiV-センタを作製し、ドースと生成収率との関係集束イオンビーム装置を用いて単結晶ダイヤモンド薄膜にSi原子を打ち込み、Siと空孔からなる色中心であるSiV-センタを作製し、ドースと生成収率との関係を明らかにした。その結果、照準した位置に共焦点顕微鏡分解能以下の位置精度でSiV-センタの発光スポ...集束イオンビーム装置を用いて単結晶ダイヤモンド薄膜にSi原子を打ち込み、Siと空孔からなる色中心であるSiV-センタを作製し、ドースと生成収率との関係を明らかにした。その結果、照準した位置に共焦点顕微鏡分解能以下の位置精度でSiV-センタの発光スポットを形成できること、1スポットあたり20個のSi原子を打ち込むと、生成収率15%でSiV-センタが生成されること、形成したスポットの中に単一のSiV-センタも存在すること、単一SiV-センタが単一光子源として機能すること、および、長時間の熱処理を施すとイオン注入で形成されたSiV-センタの輝度も十分に高いことを見出した。

液中表面ナノ改質を用いたフィードバック型神経回路の作製と解析法の構築

2011

Research Results Outline: 脳の高次機能の理解と脳型機能の創発は現代に残された大きな課題の1つである。しかしながら、未だ記憶や情動のメカニズムの理解には至っていない。この理由は 脳の高次機能の理解と脳型機能の創発は現代に残された大きな課題の1つである。しかしながら、未だ記憶や情動のメカニズムの理解には至っていない。この理由は、実神経細胞を用いて、脳中の局所神経回路を人工的に再構成できないことにあると考える。あたかも“基板... 脳の高次機能の理解と脳型機能の創発は現代に残された大きな課題の1つである。しかしながら、未だ記憶や情動のメカニズムの理解には至っていない。この理由は、実神経細胞を用いて、脳中の局所神経回路を人工的に再構成できないことにあると考える。あたかも“基板上に電子回路を作製するがごとく”任意の神経回路を基板上に再現できれば、回路の諸定数とその動作を詳細に調べることができ、脳機能の解明を大きく前進させるはずである。 この目的のために、我々は、酸化チタンの光触媒能を活用して、複数の神経細胞を要素とする任意の局所回路をガラス基板上に再構成することを試みた。その結果、下記の進展および達成があった。1)微粒子の酸化チタンをガラス基板表面にスピンコートして薄膜状にしたものと、スパッタ法によって酸化チタンを蒸着したものを作成し、その表面にオクタデシルシラン単分子膜を成長させる方法を構築した。2)上記1)の2つの方法で作成したオクタデシルシラン単分子膜のどちらも、神経細胞の接着を阻害することが分かった。ただし、スパッタ法で作成した酸化チタン膜の方が、細胞の非特異的な接着が少なかった。3)蛍光顕微鏡の水銀ランプまたは光リソグラフィ用のDeepUV光を局所的に照射したところ、酸化チタンの光触媒作用によって、照射部位の単分子膜が分解することが分かった。光触媒作用による分解は水中や細胞培養液中でも起きた。スピンコート法、スパッタ法のどちらでも、堆積後に充分なアニールを施すことによって光触媒作用が発現した。4)上記3)の結果は、水に対する接触角の低下、赤外吸収分光法によるC-H伸縮振動ピークの減少から確かめられた。5)細胞接着阻害膜を光触媒作用を用いて培養液中で分解すると、その部位にのみ細胞が接着し、細胞接着部位をパターニングできることが分かった。6)神経細胞が接着した後、神経突起を伸長できる長さを非対称的に1本だけ長く伸長できるように、細胞接着阻害領域を予め作成しておくと、その長い1本が優先的に軸策となることが分かった。上記の結果は、任意の神経回路をガラス基板上に再現するための要素技術が整ったことを意味する。

液中表面ナノ改質を用いた人工神経細胞回路の形成と神経回路数理モデルの実験的検証

2012

Research Results Outline:脳の高次機能の理解と脳型機能の創発は現代に残された大きな課題の1つである。しかしながら、未だ記憶や情動のメカニズムの理解には至っていない。この理由は、脳の高次機能の理解と脳型機能の創発は現代に残された大きな課題の1つである。しかしながら、未だ記憶や情動のメカニズムの理解には至っていない。この理由は、実神経細胞を用いて、脳中の局所神経回路を人工的に再構成できないことにあると考える。あたかも“基板上...脳の高次機能の理解と脳型機能の創発は現代に残された大きな課題の1つである。しかしながら、未だ記憶や情動のメカニズムの理解には至っていない。この理由は、実神経細胞を用いて、脳中の局所神経回路を人工的に再構成できないことにあると考える。あたかも“基板上に電子回路を作製するがごとく”任意の神経回路を基板上に再現できれば、回路の諸定数とその動作を詳細に調べることができ、脳機能の解明を大きく前進させるはずである。この目的のために、我々は、酸化チタンの光触媒能を活用して、複数の神経細胞を要素とする任意の局所回路をガラス基板パターン上に再構成することを試みた。その結果、下記の進展および達成があった。1)昨年度に独自に発見した「神経細胞が接着した後、神経突起を伸長できる長さを非対称的に1本だけ長く伸長できるように、細胞接着阻害領域を予め作成しておくと、その長い1本が優先的に軸策となる」という現象に関して、他グループから報告されている「神経突起に加わる応力が軸索/樹状突起の分化を決定する」という現象と矛盾するかどうかを調査した。このために、突起伸長を誘導するパターン形状の長さだけでなく湾曲も加えることにした。パターン湾曲による曲率の変化により、神経突起に加わる応力を制御できる。結果は、パターン湾曲の有無に依存せず、最終的に最も長く伸長できた突起が優先的に軸索に分化することを確認した。2)マイクロパターン基板上に培養神経細胞をパターニングし、Ca2+イメージングによって神経回路の自発活動を計測することに成功した。寸法の異なるパターン上の神経回路の活動を比較したところ、神経回路の大きさが増加するとともに平均発火頻度が増加することが分かった。また、たかだか十数個の細胞からなる神経回路でも自発活動が発生することを確認することができた。これは、従来考えられていたよりもはるかに少ない数の素子数からなる神経回路においても、cell assemblyとしての機能を持ちうることを示唆している。上記の結果は、任意の神経回路をガラス基板上に再現するための要素技術が整ったことを意味する。

Siイオン注入によるダイヤモンド基板中Si-V発光センターの作製と量子情報通信のための単一光子源への応用

2013

Research Results Outline: ダイヤモンド単結晶中のカラーセンタは古くからダイヤモンドの色を決定する欠陥として研究されてきた。本研究では、中でもケイ素と原子空孔からなるSi-Vセ ダイヤモンド単結晶中のカラーセンタは古くからダイヤモンドの色を決定する欠陥として研究されてきた。本研究では、中でもケイ素と原子空孔からなるSi-Vセンタに着目し、これを量子情報通信のための単一光子源として応用するために、ダイヤモンド単結晶中にケイ... ダイヤモンド単結晶中のカラーセンタは古くからダイヤモンドの色を決定する欠陥として研究されてきた。本研究では、中でもケイ素と原子空孔からなるSi-Vセンタに着目し、これを量子情報通信のための単一光子源として応用するために、ダイヤモンド単結晶中にケイ素1原子とそれに隣接する2個の原子空孔を、研究者の独自技術であるシングルイオン注入法を用いて配列形成する手法を試みた。具体的には、ダイヤモンド表面にケイ素原子を1原子ずつ注入し、このイオン注入によって生成される原子空孔と注入されたケイ素原子とを熱処理によって結合させる。注入位置にSi-Vセンタが形成できたかどうかの確認は、共焦点顕微鏡を用いたホトルミネッセンスにより行い、負に帯電したSi-Vセンタからの波長738nmの発光を観測することによって行う。また、共焦点顕微鏡を用いて、アンチバンチング計測を行うことによって、ケイ素イオン注入位置に単一のSi-Vセンタ、すなわち単一光子源が生成されることを確認する。このために、イオン注入と熱処理条件を探索した。 1スポットあたり1000個のケイ素イオンを集束イオンビーム装置(60keV)を用いて注入し、10%水素フォーミングガス中で1000℃、1時間の熱処理を施した。この結果、共焦点顕微鏡の分解能に匹敵する500nm間隔で、Si-Vセンタを配列形成することに成功した。また、ホトルミネッセンスにおけるSi-Vセンタからの発光強度は1スポットあたりのケイ素イオン注入量に比例した。このことは、上記の熱処理条件において、注入したケイ素イオンおよびイオン注入によって導入された空孔欠陥は複合欠陥をとるよりも、Si-Vセンタとしての構造、すなわちdivacancy構造になりやすいことを示唆している。 一方、共焦点顕微鏡でのホトルミネッセンス観察前に熱混酸処理およびアンモニア過酸化水素水処理を施すと、表面のコンタミネーションが除去されて、ホトルミネッセンス計測において背景光が低減した。これにより、1スポットあたり20個という極めて少数の原子を注入した位置からの発光も捕捉することができた。しかも、配列中の0.5%程度のスポットで、この発光が単一のSi-Vセンタが生成されていることを実証した。 現時点では、0.5%程度と生成率は低迷しているが、本研究での成果は、①イオン注入と熱処理によってSi-Vセンタを形成できること、②イオン注入によるSi-Vセンタの生成率は一定でドースに比例すること、③熱混酸処理およびアンモニア過酸化水素水処理がダイヤモンド表面からの背景光除去に有効であること、④1スポットあたりに20個程度のケイ素イオンを注入すれば単一のSi-Vセンタ、すなわち単一光子源を形成できることを実験的に実証したことである。

がん細胞および神経細胞内応答解析のための表面ナノ加工基板の開発

2013Collaborator:山本英明

Research Results Outline: 細胞培養液中で基板表面の細胞親和性を局所的に改質することにより,接着細胞の伸展面積や遊走方向,さらには神経細胞の突起伸長経路を制御することができる. 細胞培養液中で基板表面の細胞親和性を局所的に改質することにより,接着細胞の伸展面積や遊走方向,さらには神経細胞の突起伸長経路を制御することができる.私たちはこれまでに,酸化チタン(TiO2)の光触媒作用を活用して,TiO2表面の細胞接着阻害膜を培... 細胞培養液中で基板表面の細胞親和性を局所的に改質することにより,接着細胞の伸展面積や遊走方向,さらには神経細胞の突起伸長経路を制御することができる.私たちはこれまでに,酸化チタン(TiO2)の光触媒作用を活用して,TiO2表面の細胞接着阻害膜を培養液中において分解除去し,そこにコラーゲンなどの足場タンパク質を物理吸着させることで,基板表面の細胞親和性を局所的に改質でき,細胞の液中パターニングに応用できることを示してきた.しかしながら,初代神経細胞などの接着力の弱い細胞への応用を試みたところ,物理吸着した足場タンパク質の安定性が不十分で,神経細胞を接着させることができなかった.そこで, TiO2に高い親和性を示すタンパク質をリンカーとして用いることで,初代神経細胞の接着を支持するラミニンを被改質領域に安定に固定し,さらにその領域に初代神経細胞を選択的に接着させることを試みた. スライドガラス表面にTiO2膜をスパッタ法により成膜した.細胞接着阻害膜にはオクタデシルシラン単分子膜 (OTS SAM)を用い,表面を改質する直前に,基板を血清入り培地に一晩浸漬した.リンカータンパク質とラミニンが複合体を形成し,さらにこの複合体がTiO2上に吸着することは免疫沈降法により確認した.細胞はラット海馬神経細胞を用い,Neurobasal培地で培養した. リンカータンパク質を介してラミニンを結合させたTiO2基板表面上では,培養開始から2週間以上に渡ってラット海馬神経細胞が安定に成長した.また,OTS SAM/TiO2に対して蛍光顕微鏡の光学系で集光した紫外光を照射したところ,ラミニンは光改質した領域に選択的に吸着し,神経細胞を改質領域上にパターニングすることができた.未照射領域への非特異的な細胞接着はほとんど確認されなかった.リンカータンパク質を用いてラミニンが安定にパターニングできるようになったことは,TiO2の光触媒能を活用した液中表面改質技術が初代神経細胞にも応用できることを意味する.

ナノ加工を用いた局所神経回路の構築

2013Collaborator:山本英明

Research Results Outline: 脳の機能素子である神経細胞は、シナプス結合によってネットワークを形成し、シグナルの伝達/処理を行う。脳は外部刺激を受けていない状態でも活動しているが 脳の機能素子である神経細胞は、シナプス結合によってネットワークを形成し、シグナルの伝達/処理を行う。脳は外部刺激を受けていない状態でも活動しているが、例えばその情報処理中枢である大脳皮質における自発的神経活動は、ランダムではなく、巨視的に視るとあ... 脳の機能素子である神経細胞は、シナプス結合によってネットワークを形成し、シグナルの伝達/処理を行う。脳は外部刺激を受けていない状態でも活動しているが、例えばその情報処理中枢である大脳皮質における自発的神経活動は、ランダムではなく、巨視的に視るとある特定の順番とタイミングをもっている。この自発活動は興奮性/抑制性神経細胞からなる再帰的ネットワークから生み出され、機能的には、例えば将来の入力への期待を表現するための内部モデルを脳内に造り出していると考えられている。したがって、脳機能の神経基盤を探求する上で、自発的神経活動の発生機序を明らかにすることは重要である。そこで我々は、半導体微細加工技術を用いて培養神経回路の素子数を外因的に制御し、その微小神経回路内の神経細胞の自発活動を観察することで、神経回路内で自発活動が起こるために必要な細胞数や、自発活動の発生における抑制性神経細胞の役割を調べた。 Poly (ethylene glycol) (PEG) silane(細胞接着阻害領域)、Poly-D-Lysine(PDL; 細胞接着可能領域)から成るPDL / PEGのパターン(200µm×200 µm; 500 µm×500 µm; 1000 µm×1000 µm)をガラス基板上に作製した。この基板上に胎生18日のラット胎児大脳皮質神経細胞を播種し、グリア細胞と共培養することにより、パターン内に神経回路を構築させた。培養開始から10-11日目において、構築した神経回路で起こる自発活動を、蛍光色素Fluo-4を用いたCa2+イメージングによって計測した。また、NeuN(神経細胞マーカー)とGABA(抑制性神経細胞マーカー)の共染色により、神経回路を構成する抑制性細胞の割合を評価した。 マイクロパターン基板上に培養神経細胞をパターニングし、Ca2+イメージングによって神経回路の自発活動を計測することに成功した。寸法の異なるパターン上の神経回路の活動を比較したところ、神経回路の大きさが増加するとともに自発的バースト活動の頻度が増加することが分かった。また、たかだか十数個の細胞からなる神経回路でも自発活動が発生することを確認することができた。これは、従来考えられていたよりもはるかに少ない数の素子数からなる神経回路であっても、cell assemblyとしての機能を持ちうることを示唆している。

シリコンフォトニクスのための単一不純物原子シリコンデバイスの開発

2015

Research Results Outline:イオン注入を用いてSi FETのチャネル領域にErまたはGeといった、Siバンドギャップ中に深い準位を形成する不純物トを注入し、フォトルミネッセンスまイオン注入を用いてSi FETのチャネル領域にErまたはGeといった、Siバンドギャップ中に深い準位を形成する不純物トを注入し、フォトルミネッセンスまたはFET電流によるインパクトイオン化によるエレクトロルミネッセンスを単一ドーパントレベル、すなわ...イオン注入を用いてSi FETのチャネル領域にErまたはGeといった、Siバンドギャップ中に深い準位を形成する不純物トを注入し、フォトルミネッセンスまたはFET電流によるインパクトイオン化によるエレクトロルミネッセンスを単一ドーパントレベル、すなわち単一フォトン検出を行った。Er注入においては、酸素原子との共注入によりEr:O比と発行強度の関係を評価した。60 keVでGeイオンを注入したFETではデバイスの耐圧の制限から、インパクトイオン化に至らず、発光は観察されなかった。一方、集束イオンビーム装置を用いてEr原子を20 keVで注入したデバイスでは、1.5 um領域からのフォトルミネッセンスの計測に成功した。

シリコンフォトニクスのための単一Er注入Siデバイスの開発

2016

Research Results Outline:室温で光子を1個ずつ放出する新しいシリコンフォトニクス素子を開発し,その発光特性を活かして量子情報処理・通信に活用できるように,従来のシリコン電界効果室温で光子を1個ずつ放出する新しいシリコンフォトニクス素子を開発し,その発光特性を活かして量子情報処理・通信に活用できるように,従来のシリコン電界効果トランジスタ(MOS FET)を高度化することが本研究の目的である.具体的には,たった1原子のエル...室温で光子を1個ずつ放出する新しいシリコンフォトニクス素子を開発し,その発光特性を活かして量子情報処理・通信に活用できるように,従来のシリコン電界効果トランジスタ(MOS FET)を高度化することが本研究の目的である.具体的には,たった1原子のエルビウムをチャネルに持つFETを作製し,電流注入によってこれらの単一原子からの発光を制御できるデバイスを開発する.チャネル中にエルビウムを注入したMOS FETの試作を行い、電気伝導特性を評価すると同時に、エルビウムと酸素の共注入と熱処理を施した際のEr:Oクラスター生成を3次元アトムプローブ測定によって同定した。

イオン注入によるダイヤモンドのカラーセンタ形成プロセスの構築と単一光子源への応用

2017

Research Results Outline:量子通信用の単一光子源の実現を目指して、単結晶ダイヤモンド中に単一カラーセンタを形成するためのプロセス開発を行った。IIa結晶中にSiイオン注入により量子通信用の単一光子源の実現を目指して、単結晶ダイヤモンド中に単一カラーセンタを形成するためのプロセス開発を行った。IIa結晶中にSiイオン注入によりSiVセンタを、また、窒素を多量に含むIb基板にNiを打ち込むことでNE8センタを作製できる条件を...量子通信用の単一光子源の実現を目指して、単結晶ダイヤモンド中に単一カラーセンタを形成するためのプロセス開発を行った。IIa結晶中にSiイオン注入によりSiVセンタを、また、窒素を多量に含むIb基板にNiを打ち込むことでNE8センタを作製できる条件を探索した。Ni打ち込みではNi由来のホトルミネッセンス(波長783nm)が計測されたが、NE8由来の発光ではなかった。一方、Si打ち込みでは単一SiVセンタの形成(波長738nm)を確認できた。20keVから18MeVまでのエネルギー範囲において打ち込みSi原子数 に対するSiV生成収率がエネルギーによらず一定であることを見出した。

シリコンフォトニクスのための単一Er注入Siデバイスの開発

2018

Research Results Outline:シングルイオン注入法を用いて少数のエルビウム原子をシリコンPNダイオードまたはMOSトランジスタのアクティブ領域に注入し、エルビウムからの発光を電気的シングルイオン注入法を用いて少数のエルビウム原子をシリコンPNダイオードまたはMOSトランジスタのアクティブ領域に注入し、エルビウムからの発光を電気的に制御できるデバイスを試作・評価することが本研究の目的である。このために20nm程度まで薄膜化した...シングルイオン注入法を用いて少数のエルビウム原子をシリコンPNダイオードまたはMOSトランジスタのアクティブ領域に注入し、エルビウムからの発光を電気的に制御できるデバイスを試作・評価することが本研究の目的である。このために20nm程度まで薄膜化したSOIウェハにPNダイオードとnチャネルMOSトランジスタとを、学内のクリーンルーム共有設備を利用して試作するプロセスを開発した。これにより、両デバイスのアクティブ領域からの発光が上方より観察できる構造をもつデバイスが試作されたが、エレクトロルミネセンス計測では十分な光量の発光が観察されず、熱処理中のエルビウムの外方拡散により試作デバイスのアクティブ領域に十分なエルビウム原子が残らなかった可能性が示唆された。

不純物イオン注入による酸化チタンへの可視光応答性付与とその細胞パターニング応用

2019

Research Results Outline:酸化チタンへの可視光応答能(可視光照射による光触媒能)付与を目的として、集束イオンビームを用いて不純物イオンを酸化チタン表面に注入し、その光触媒能を実酸化チタンへの可視光応答能(可視光照射による光触媒能)付与を目的として、集束イオンビームを用いて不純物イオンを酸化チタン表面に注入し、その光触媒能を実験的に評価した。スパッタ法を用いて、石英上のアナターゼ酸化チタンに、低エネルギーのAu、Er,、F...酸化チタンへの可視光応答能(可視光照射による光触媒能)付与を目的として、集束イオンビームを用いて不純物イオンを酸化チタン表面に注入し、その光触媒能を実験的に評価した。スパッタ法を用いて、石英上のアナターゼ酸化チタンに、低エネルギーのAu、Er,、Fe、Siの4種イオンビームを注入し、その基板表面にオクタデシルシラン単分子膜を成膜して可視光(波長:420-440nm)を照射し、光触媒能によって単分子膜が分解した表面にのみ蛍光標識分子を吸着させることで、局所的な可視光応答能を評価できる方法を構築した。

シリコンナノ構造配列を用いた微小電子の作成

2001

Research Results Outline:「シリコンナノ構造配列を用いた微小電子源の作製」 先鋭なシリコンナノ構造配列は、フラットパネルディスプレイやマルチ電子線リソグラフィ用の微小電子源とし「シリコンナノ構造配列を用いた微小電子源の作製」 先鋭なシリコンナノ構造配列は、フラットパネルディスプレイやマルチ電子線リソグラフィ用の微小電子源として期待されている。その理由は、①材料としてシリコンを用いることにより、従来の微細加工を利用した高密...「シリコンナノ構造配列を用いた微小電子源の作製」 先鋭なシリコンナノ構造配列は、フラットパネルディスプレイやマルチ電子線リソグラフィ用の微小電子源として期待されている。その理由は、①材料としてシリコンを用いることにより、従来の微細加工を利用した高密度配列形成が可能なこと、②微小電子源と同一基板上に制御用の集積回路を組み込めること、③ナノスケールで先鋭な構造や低い仕事関数が、他の材料と比較して、電界放出に有利であること、などである。 我々は、独自に発見したアルカリ溶液中でのイオン照射減速エッチング現象を利用して、鋭い先端を有するシリコンのナノピラミッド配列を自己整合的に一括で作製する技術を開発し、微小電子源配列への応用を推進してきた。本研究の成果を以下にまとめる。 (1) シリコンナノピラミッド配列(2極管構造)からの電子放出特性評価異なる電気伝導型(p/n型)のSi(100)基板に様々なドーパントイオン(リン、ホウ素、アルゴン等)を照射し、照射損傷をマスクとして、ヒドラジン一水和物中で異方性エッチングを行い、ナノピラミッド配列を作製した。ピラミッドは熱酸化とその後の酸化膜剥離により先鋭化し、ピラミッド先端からの電子放出特性を超高真空中で評価した。基板の電気伝導型とピラミッド先端の電気伝導型は、走査型マクスウェル応力顕微鏡を用いた表面電位の測定により同定した。全ての電気伝導型とドーパントイオン照射の場合でも、良好な電界放出特性を示したが、特にp型基板にドナーイオンを注入して作製したナノピラミッドにおいて、高い時間安定性を得た。これは、ピラミッド先端に形成されるP/N接合界面の空乏層中における熱的なキャリア生成が、ピラミッド形状や先端の仕事関数の影響による素子ごとの特性のばらつきを自発的に制御するためであると考えられる。したがって、基板の電気伝導型やドーパントイオン種に依存せずに、自己整合的に一括で作製できる我々のプロセスは、従来のシリコン微小電子源作製プロセスと比較して、スループットの観点から優れていると結論できる。(2) 4メチル水酸化アンモニウム(TMAH)を用いたシリコンナノピラミッド配列の作製これまでは、シリコンの異方性エッチングにヒドラジン一水和物を用いていたが、この溶液は発がん性を有し、爆発性の観点からも危険性が高い。そこで、人体や環境への影響が少ない4メチル水酸化アンモニウム(TMAH)を用いて、シリコンのイオン照射減速エッチング現象を調査した。イオン照射したSi(100)基板を80度、2.38%のTMAH(NMD-3)を用いてエッチングしたところ、イオン照射減速エッチング現象を確認できた。すなわち、未照射領域のエッチレートに対し、照射領域のエッチレートが著しく低下し、エッチングマスクとして機能することが分かった。なお、照射するイオンとして、リン、ホウ素およびアルゴンのいずれにおいても、有効なイオン照射減速エッチング現象が確認できた。ただし、TMAHの有するエッチングレートの面方位依存性から、{100}に対する{111}面のエッチレート選択比がヒドラジン一水和物より低く、異方性エッチングすると構造にアンダーカットが生じることが分かった。TMAHの有するこれらの性質を利用すると、ナノスケールのテーブル構造を制御よく作製できる。(3) TMAHを用いた3極管構造の作製(2)の結果、TMAH中におけるイオン照射減速エッチング現象を用いて、シリコンナノテーブル配列を作製し、この形状を有効に利用して引出し電極を有するシリコン微小電子源を完成した。プロセスは、以下のステップから構成される。①イオン注入を用いて、Si(100)表面に配列状にイオン照射損傷を導入する。②損傷領域をマスクとして、TMAH中でシリコン減速エッチング現象を利用して、ナノテーブル配列を作製する。③熱酸化により、テーブルの先鋭化と引出し電極下の絶縁膜(熱酸化膜)を成長させる。④引出し電極として、ニオブを堆積する。⑤フッ酸を用いて、テーブル部分を選択的にリフトオフし、3極管構造を作製する。このプロセスは、マスク合わせを全く用いずに、自己整合的に引出し電極を有する3極管構造を作製でき、作製された微小電子源は現在最小のものである。引出し電極と、尖鋭な電子源を近接できることから、低閾値電圧での電子放出を期待できる。加えて、イオン注入がピラミッド先端の電気伝導型制御とナノテーブル構造作製の両方の役割を果たし、熱酸化がテーブルの先鋭化、ドーパントイオンの活性化および絶縁層堆積を兼ねるため、従来のプロセスよりプロセスステップ数を大幅に削減することが可能である。加えて、プロセス全体にわたって、ドライエッチングではなくウェットエッチングのみを採用していることから、ウェハスケールかつ低コストで製造できる点に特長がある。(1)から(3)に示すように、本研究を通じて、従来のプロセスより有利なプロセスを開発し、現在報告されている中でも最も微細な微小電子源配列を完成した。

シリコンナノ構造配列を用いた微小電子減の開発

2002

Research Results Outline:「シリコンナノ構造配列を用いた微小電子源の作製」 先鋭なシリコンナノ構造配列は、フラットパネルディスプレイやマルチ電子線リソグラフィ用の微小電子源とし「シリコンナノ構造配列を用いた微小電子源の作製」 先鋭なシリコンナノ構造配列は、フラットパネルディスプレイやマルチ電子線リソグラフィ用の微小電子源として期待されている。その理由は、①材料としてシリコンを用いることにより、従来の微細加工を利用した高密...「シリコンナノ構造配列を用いた微小電子源の作製」 先鋭なシリコンナノ構造配列は、フラットパネルディスプレイやマルチ電子線リソグラフィ用の微小電子源として期待されている。その理由は、①材料としてシリコンを用いることにより、従来の微細加工を利用した高密度配列形成が可能なこと、②微小電子源と同一基板上に制御用の集積回路を組み込めること、③ナノスケールで先鋭な構造や低い仕事関数が、他の材料と比較して、電界放出に有利であること、などである。 我々は、独自に発見したアルカリ溶液中でのイオン照射減速エッチング現象を利用して、鋭い先端を有するシリコンのナノピラミッド配列を自己整合的に一括で作製する技術を開発し、微小電子源配列への応用を推進してきた。本研究の成果を以下にまとめる。 (1) TMAHを用いた3極管構造の作製TMAH中におけるイオン照射減速エッチング現象を用いて、シリコンナノテーブル配列を作製し、この形状を有効に利用して引出し電極を有するシリコン微小電子源を完成した。プロセスは、以下のステップから構成される。①イオン注入を用いて、Si(100)表面に配列状にイオン照射損傷を導入する。②損傷領域をマスクとして、TMAH中でシリコン減速エッチング現象を利用して、ナノテーブル配列を作製する。③熱酸化により、テーブルの先鋭化と引出し電極下の絶縁膜(熱酸化膜)を成長させる。④引出し電極として、ニオブを堆積する。⑤フッ酸を用いて、テーブル部分を選択的にリフトオフし、3極管構造を作製する。このプロセスは、マスク合わせを全く用いずに、自己整合的に引出し電極を有する3極管構造を作製でき、作製された微小電子源は現在最小のものである。引出し電極と、尖鋭な電子源を近接できることから、低閾値電圧での電子放出を期待できる。加えて、イオン注入がピラミッド先端の電気伝導型制御とナノテーブル構造作製の両方の役割を果たし、熱酸化がテーブルの先鋭化、ドーパントイオンの活性化および絶縁層堆積を兼ねるため、従来のプロセスよりプロセスステップ数を大幅に削減することが可能である。加えて、プロセス全体にわたって、ドライエッチングではなくウェットエッチングのみを採用していることから、ウェハスケールかつ低コストで製造できる点に特長がある。(2) TMAHを用いた3極管構造からのエミッション評価(1)で作製した3極管構造を超高真空チェンバ内にセッティングし、エミッション実験を行った。シリコンウェハ裏面にオーミック電極を作製してエミッタに通電し、ゲート電極にはワイヤーボンディングにより電圧を印加した。コレクタは透明導電性ガラス上に蒸着した蛍光板となっており、エミッションの有無を蛍光スポットとして観察できるようになっている。真空度は5E-7Pa以下で行われた。ゲート電圧に約30Vの電圧を印加したところ、コレクタ電流とともに、蛍光スポットが観察できた。I-V特性は良好な電界放出を示し、10時間以上の長時間にわたってエミッションを持続することができた。(1)(2)に示すように、本研究を通じて、従来のプロセスより有利なプロセスを開発し、現在報告されている中でも最も微細な微小電子源配列を完成し、低閾値電圧でのエミッションを確認した。

有機シラン単分子膜成長ダイナミクスおよび微視的構造解明

2007Collaborator:三宅丈雄, 山本英明

Research Results Outline:【背景と目的】成長メカニズムにおける基礎的な学理構築の必要性と単分子膜としての応用性の高さから、魅力的なソフトマターである有機シラン自己組織化単分子膜【背景と目的】成長メカニズムにおける基礎的な学理構築の必要性と単分子膜としての応用性の高さから、魅力的なソフトマターである有機シラン自己組織化単分子膜(SAM)を研究対象とし、大規模計算機シミュレーションによる予測と実験的検証の両面から成長過程の動...【背景と目的】成長メカニズムにおける基礎的な学理構築の必要性と単分子膜としての応用性の高さから、魅力的なソフトマターである有機シラン自己組織化単分子膜(SAM)を研究対象とし、大規模計算機シミュレーションによる予測と実験的検証の両面から成長過程の動的素過程を解析し、膜構造と膜質に関する微視的描像を解明することを目的として研究を推進した。有機シランSAMにおける最重要課題は、高い応用性が示されているにもかかわらず、実験的に膜構造を決定する手法に乏しく、その結果、構造が未解明なまま放置されていることに加え、成膜時に外場が与える影響によって、成長様式や膜構造が異なり、実験室単位で質の異なる膜を対象として議論がなされていることである。【研究成果】シミュレーションによる成果: ・同種分子を用いて成膜した有機シランSAMであっても、下地酸化膜との化学結合(アンカリング)の数と、単分子膜同士の  架橋(クロスリンク)の数に違いがあり、これが異なる膜質の原因となっている。 ・アンカリングやクロスリンクの数が増加すると、膜は結晶性(六方細密充填構造)からアモルファス構造に変化する。実験による成果: ・液相で堆積したSAMと、気相で堆積したSAMの間には、成長過程とできあがる構造に大きな違いがある。 ・液相で成長するSAMはデンドライト成長し、気相で成長するSAMは一様成長する。 ・液相で成長するSAMは比較的結晶性を有するのに対し、気相で成長したSAMはアモルファスである。 ・膜の結晶性は、気相/液相といった堆積方法の差でなく、成膜温度に直接的に起因するようである。 ・有機シランSAMを電子線レジスト代替として用いる際の現像液であるHFに対し、結晶性を有するSAMより、アモルファスであるSAM  の方が耐性がある。このことは、CVDで成膜したアモルファスのSAMの方が電子線レジスト代替として優れていることを示す。 ・有機シランSAMの電子線照射に対する感度はSAMの末端基に大きく依存する。

Foreign Countries Research Activity

Research Project Title: ダイヤモンド窒素-空孔欠陥を用いた4量子ビット量子レジスタの作製

2016/04-2016/07

Affiliation: Ulm大学, MaxPlanck研究所(ドイツ)

Lecture Course

Course TitleSchoolYearTerm
Modelling for Engineering ASchool of Fundamental Science and Engineering2020spring semester
Modelling for Engineering A [S Grade]School of Fundamental Science and Engineering2020spring semester
Basic Experiments in Science and Engineering 2A DenshibutsuriSchool of Fundamental Science and Engineering2020spring semester
Introduction to Electronic and Physical SystemsSchool of Fundamental Science and Engineering2020an intensive course(spring)
Introduction to Electronic and Physical Systems [S Grade]School of Fundamental Science and Engineering2020an intensive course(spring)
Circuit Theory BSchool of Fundamental Science and Engineering2020fall semester
Circuit Theory B [S Grade]School of Fundamental Science and Engineering2020fall semester
Electronic and Physical Systems Laboratory ASchool of Fundamental Science and Engineering2020fall semester
Electronic and Physical Systems Laboratory A [S Grade]School of Fundamental Science and Engineering2020fall semester
Electronic and Physical Systems Laboratory BSchool of Fundamental Science and Engineering2020spring semester
Electronic and Physical Systems Laboratory B [S Grade]School of Fundamental Science and Engineering2020spring semester
Molecular ElectronicsSchool of Fundamental Science and Engineering2020spring semester
Molecular Electronics [S Grade]School of Fundamental Science and Engineering2020spring semester
Electronic and Physical Systems Laboratory CSchool of Fundamental Science and Engineering2020fall semester
Electronic and Physical Systems Laboratory C [S Grade]School of Fundamental Science and Engineering2020fall semester
Special Seminar on Electronic and Physical SystemsSchool of Fundamental Science and Engineering2020fall semester
Electronic Circuits BSchool of Fundamental Science and Engineering2020fall semester
Bachelor Thesis ASchool of Fundamental Science and Engineering2020spring semester
Bachelor Thesis ASchool of Fundamental Science and Engineering2020fall semester
Bachelor Thesis A [S Grade]School of Fundamental Science and Engineering2020spring semester
Bachelor Thesis A [S Grade]School of Fundamental Science and Engineering2020fall semester
Bachelor Thesis BSchool of Fundamental Science and Engineering2020fall semester
Bachelor Thesis BSchool of Fundamental Science and Engineering2020spring semester
Bachelor Thesis B [S Grade]School of Fundamental Science and Engineering2020fall semester
Research Project BSchool of Fundamental Science and Engineering2020spring semester
Research Project BSchool of Fundamental Science and Engineering2020spring semester
Research Project CSchool of Fundamental Science and Engineering2020fall semester
Research Project CSchool of Fundamental Science and Engineering2020fall semester
Research Project ASchool of Fundamental Science and Engineering2020fall semester
Research Project DSchool of Fundamental Science and Engineering2020spring semester
Introduction to ElectronicsSchool of Fundamental Science and Engineering2020winter quarter
Physical Electronics Seminar ASchool of Fundamental Science and Engineering2020winter quarter
Physical Electronics Laboratory ASchool of Fundamental Science and Engineering2020winter quarter
Master's Thesis (Department of Electronic and Physical Systems)Graduate School of Fundamental Science and Engineering2020full year
Research on Molecular Nano-engineeringGraduate School of Fundamental Science and Engineering2020full year
Research on Molecular Nano-engineeringGraduate School of Fundamental Science and Engineering2020full year
Introduction to Molecular Nano-engineeringGraduate School of Fundamental Science and Engineering2020fall semester
Introduction to Molecular Nano-engineeringGraduate School of Fundamental Science and Engineering2020fall semester
Molecular NanoengineeringGraduate School of Advanced Science and Engineering2020fall semester
Introduction to Molecular Nano-engineeringGraduate School of Advanced Science and Engineering2020fall semester
Seminar on Molecular Nano-engineering AGraduate School of Fundamental Science and Engineering2020spring semester
Seminar on Molecular Nano-engineering AGraduate School of Fundamental Science and Engineering2020spring semester
Seminar on Molecular Nano-engineering BGraduate School of Fundamental Science and Engineering2020fall semester
Seminar on Molecular Nano-engineering BGraduate School of Fundamental Science and Engineering2020fall semester
Seminar on Molecular Nano-engineering CGraduate School of Fundamental Science and Engineering2020spring semester
Seminar on Molecular Nano-engineering CGraduate School of Fundamental Science and Engineering2020spring semester
Seminar on Molecular Nano-engineering DGraduate School of Fundamental Science and Engineering2020fall semester
Seminar on Molecular Nano-engineering DGraduate School of Fundamental Science and Engineering2020fall semester
Master's Thesis (Department of Electronic and Physical Systems)Graduate School of Fundamental Science and Engineering2020full year
Research on Molecular Nano-engineeringGraduate School of Fundamental Science and Engineering2020full year
Integrative Nano-Science and Nano-EngineeringGraduate School of Fundamental Science and Engineering2020spring semester
Integrative Nano-Science and Nano-EngineeringGraduate School of Creative Science and Engineering2020spring semester
Integrative Nano-Science and Nano-EngineeringGraduate School of Advanced Science and Engineering2020spring semester
Integrative Nano-Science and Nano-EngineeringGraduate School of Advanced Science and Engineering2020spring semester
Master's Thesis (Department of Nanoscience and Nanoengineering)Graduate School of Advanced Science and Engineering2020full year
Research on Molecular NanoengineeringGraduate School of Advanced Science and Engineering2020full year
Research on Molecular NanoengineeringGraduate School of Advanced Science and Engineering2020full year
Experiments in Nanoscience and NanoengineeringGraduate School of Advanced Science and Engineering2020full year
Experiments in Nanoscience and NanoengineeringGraduate School of Advanced Science and Engineering2020full year
Seminar on Molecular Nanoengineering AGraduate School of Advanced Science and Engineering2020spring semester
Seminar on Molecular Nanoengineering AGraduate School of Advanced Science and Engineering2020spring semester
Seminar on Molecular Nanoengineering BGraduate School of Advanced Science and Engineering2020fall semester
Seminar on Molecular Nanoengineering BGraduate School of Advanced Science and Engineering2020fall semester
Seminar on Molecular Nanoengineering CGraduate School of Advanced Science and Engineering2020spring semester
Seminar on Molecular Nanoengineering CGraduate School of Advanced Science and Engineering2020spring semester
Seminar on Molecular Nanoengineering DGraduate School of Advanced Science and Engineering2020fall semester
Seminar on Molecular Nanoengineering DGraduate School of Advanced Science and Engineering2020fall semester
Master's Thesis (Department of Nanoscience and Nanoengineering)Graduate School of Advanced Science and Engineering2020full year
Research on Molecular NanoengineeringGraduate School of Advanced Science and Engineering2020full year