氏名

イチムラ シンゴ

一村 信吾

職名

教授(任期付)

所属

(リサーチイノベーションセンター)

学歴・学位

学歴

1971年04月-1975年03月 大阪大学 工学部 応用物理学科
1975年04月-1977年03月 大阪大学大学院 工学研究科 応用物理学専攻・修士課程
1977年04月-1980年03月 大阪大学大学院 工学研究科 応用物理学専攻・博士課程

学位

博士

経歴

1982年04月-1985年09月工業技術院電子技術総合研究所極限技術部・研究員
1985年10月-1993年03月工業技術院電子技術総合研究所極限技術部・主任研究官
1993年04月-1997年12月工業技術院電子技術総合研究所極限技術部・表面制御研究室長
1998年01月-2001年03月工業技術院電子技術総合研究所極限技術部・総括主任研究官
2001年04月-2002年03月独立行政法人産業技術総合研究所企画本部総括企画主幹
2002年04月-2004年03月独立行政法人産業技術総合研究所極微プロファイル計測研究ラボ長
2004年04月-2007年02月独立行政法人産業技術総合研究所計測フロンティア研究部門長
2007年02月-2012年03月独立行政法人産業技術総合研究所理事
2012年04月-2014年06月独立行政法人産業技術総合研究所副理事長
2014年07月-2018年03月名古屋大学イノベーション戦略室・室長/教授

委員歴・役員歴(学外)

2006年10月-日本学術会議連携会員
2018年04月-日本学術振興会 第193委員会委員長
2015年02月-経済産業省計量行政審議会委員
2015年10月-ナノテクノロジー国際標準化国内審議委員会委員長
2014年10月-2017年09月日本学術振興会 研究開発専門委員会委員長
2013年10月-2015年09月総合化学技術会議エネルギー戦略協議会 ナノテクノロジー・材料WG委員
2013年08月-2015年03月経済産業省産業構造審議会臨時委員
2008年04月-2011年03月総合科学技術会議 情報通信PT委員
2005年04月-2008年03月文部科学省 大学設置・学校法人審議会専門委員
2010年04月-2012年03月応用物理学会副会長
2007年04月-2009年03月日本真空協会(学会)副会長
1997年04月-2001年03月日本表面科学会理事
2008年01月-2014年12月ISO TC201(表面化学分析)国際議長
2006年01月-2011年12月ISO TC229(ナノテクノロジー)WG2議長(コンビーナ)

論文

Development of standards for reliable surface analyses by ISO technical committee 201 on surface chemical analysis, C. J. Powell, R. Shimizu, K. Yoshihara and S. Ichimura,

C. J. Powell, R. Shimizu, K. Yoshihara and S. Ichimura,

Surface Interface Anal. 47, 127-134 (2015)査読有り

Emission characteristics of a charged-droplet beam source using vacuum electrospray of an ionic liquid,

Yukio Fujiwara, Naoaki Saito, Hidehiko Nonaka and Shingo Ichimura,

Surf. Interface Anal. 45, 517–521 (2013)査読有り

Component analysis of a mixed beam generated by vacuum electrospray of an ionic liquid,

Yukio Fujiwara, Naoaki Saito, Hidehiko Nonaka, and Shingo Ichimura,

J. Appl. Phys. 111, 064901/1-064901/7 (2012)査読有り

Beam Characteristics of Positively and Negatively Charged Droplets,

Yukio Fujiwara, Naoaki Saito, Hidehiko Nonaka, and Shingo Ichimura,

Jpn. J. Appl. Phys. 51, 036701/1-036701/8 (2012)査読有り

Characteristics of a charged-droplet beam generated by vacuum electrospray of an ionic liquid,

Y. Fujiwara, N. Saito, H. Nonaka, T. Nakanaga, S. Ichimura,

Chem. Phys. Lett. 501, 335-3379 (2011)査読有り

Time-of-Flight secondary ion mass spectrometry (TOF-SIMS) using the metal-cluster-complex primary ion of Ir4(CO)7+,

Y. Fujiwara, N. Saito, H. Nonaka, A. Suzuki, T. Nakanaga, T. Fujimoto, A. Kurokawa and S. Ichimura,

Surf. Interface Anal. 43, 245-248 (2011)査読有り

AFM Tip Characterizer fabricated by Si/SiO2 multilayers,

H. Takenaka, M. Hatayama, H. Itoh, T. Ochiai, A. Takano, S. kurosawa, H. Itoh and S. Ichimura,

e-J. Surf. Sci. Nanotech 9 293-296 (2011)査読有り

Development of Si/SiO2 multilayer type AFM tip characterizers,

H. Takenaka, M. Hatayama, H. Itoh, T. Ochiai, A. Takano, S. kurosawa, H. Itoh and S. Ichimura,

J. Surf. Anal. 17, 264-268 (2011)査読有り

Current activities of ISO TC229/ WG2 on purity evaluation and quality assurance standards for carbon nanotubes,

S. Ichimura,

J. Analytical and Bioanalytical Chemistry 396, 963-971 (2010)査読有り

A new cluster-ion-beam source for secondary ion mass spectrometry (SIMS) using the electrospray of a pure ionic liquid under high vacuum,

Y. Fujiwara, N. Saito, H. Nonaka, T. Nakanaga, S. Ichimura,

Nucl. Instrum. Methods in Phys. Res. B268 (2010) 1938-1941査読有り

Metal-cluster-complex primary ion beam source for Secondary Ion Mass Spectrometry (SIMS) ,

Y. Fujiwara, K. Watabnabe, H. Nonaka, N. Saito, A. Suzuki, T. Fujimoto, A. Kurokawa, and S. Ichimura,

Vacuum 84, 544-549 (2010)査読有り

Evaluation of outermost surface temperature of Silicon substrates during UV-excited ozone oxidation at low temperature, )  

N. Kameda, T. Nishiguchi, Y. Morikawa, M. Kekura, K. Nakamura, T. Ushiyama, H. Nonaka and S. Ichimura ,

Analytical Sciences 26 (No.2), 273-276 (2010査読有り

Characterizing Atomic Force Microscopy Tip Shape in Use,

C. Wang, H. Itoh, S. Ichimura, J. Hu, J. Sun, and D. Shen,

J. Nanosci. Nanotechnol. 9, 803-808, (2009).査読有り

Current standardization activities for the measurement and characterization of nanomaterials and structures,

S. Ichimura, H. Itoh, and T. Fujimoto,

J. Phys. Conf. Series 159, 012001 (2009)査読有り

Silicon oxidation by ozone,

C.K. Fink, K. Nakamura, S. Ichimura, and S.J. Jenkins,

J. Phys.-Condens Mat. 21, 183001 (2009)査読有り

Ion Beam Generation from an Electrolyte Solution Containing Polyatomic Cations and Anions for Secondary Ion Mass Spectrometry,

Y. Fujiwara, K. Watanabe, N. Saito, H. Nonaka, A. Suzuki, T. Nakanaga, T. Fujimoto, A. Kurokawa, S. Ichimura, and M. Tomita,

Jpn. J. Appl. Phys. 48, 126005 (2009)査読有り

Advantage of Highly Concentrated (≥90%) Ozone for Chemical Vapor Deposition SiO2 Grown under 200 °C Using Hexamethyldisilazane and Ultraviolet Light Excited Ozone,

N. Kameda, T. Nishiguchi, Y. Morikawa, M. Kekura, H. Nonaka, and S. Ichimura,

Jpn. J. Appl. Phys. 48, 05DB01 (2009) 査読有り

Improvement of Chemical Vapor Deposited-SiO2 film Properties by Annealing with UV-light-excited Ozone,

T. Nishiguchi, S. Saito, N. Kameda, M. Kekura, H. Nonaka, and S. Ichimura,

Jpn. J. Appl. Phys. 48, 116509 (2009)査読有り

紫外光分解反応を用いた減圧・高濃度オゾンガス分解装置、

亀田直人、西口哲也、森川良樹、花倉満、野中秀彦、一村信吾、

J. Vac. Soc. Jpn. 52(No.4), 245-247 (2009) 査読有り

Dissociative ionization of a large molecule studied by intense phase-controlled laser fields,

H. Ohmura, N.Saito, H. Nonaka, and S. Ichimura,

Phys. Rev. A77, 053405 (2008)査読有り

High depth resolution SIMS analysis using metal cluster complex ion bombardment ,

M. Tomita, T. Kinno, M. Koike, H. Tanaka, S. Takeno, Y. Fujiwara, K.Kondou, Y. Teranishi, H. Nonaka, T. Fujimoto, A. Kurokawa, and S. Ichimura,

J. Phys. Conf. Series 100, 012001 (2008)査読有り

Photochemical Reaction of Ozone and 1,1,1,3,3,3-Hexamethyldisilazane: Analysis of the Gas Reaction between Precursors in a Photochemical Vapor Deposition Process,

K. Nakamura, H. Nonaka, N. Kameda, T. Nishiguchi, and S. Ichimura,

Jpn. J. Appl. Phys. 47 (No. 9), 7349-7355 (2008)査読有り

Geometric Characterization of Carbon Nanotubes by Atomic Force Microscopy in Conjunction with a Tip Characterizer,

C. Wang, H. Itoh, Y. Homma, J. Sun, J. Hu, and S. Ichimura,

Jpn. J. Appl. Phys. 47 (No.7B), 6128-6133 (2008)査読有り

Cluster SIMS using metal cluster complex ions,

Y. Fujiwara, K. Kondou, Y. Teranishi, K. Watanabe, H. Nonaka, N. Saito, H. Itoh, T. Fujimoto, A. Kurokawa, S. Ichimura, and M. Tomita,

Appl. Surf. Sci. 255, 916-921 (2008)査読有り

Factorial analysis of cluster SIMS depth profiling using metal-cluster-complex ion bemas,

Y. Fujiwara, K. Kondou, K. Watanabe, H. Nonaka, N. Saito, T. Fujimoto, A. Kurokawa, S. Ichimura, and M. Tomita,

Appl. Surf. Sci. 255, 1338-1340 (2008)査読有り

Global standardization of scanning probe microscopy,

D. Fujita, H. Itoh, S. Ichimura and T. Kurosawa,

Nanotechnology 18, 084002/1 (2007).査読有り

Characteristics of altered layers formed by sputtering with cluster ions containing diverse elements with large mass differences ,

Y. Fujiwara, K. Kondou, H. Nonaka, N. Saito, T. Fujimoto, A. Kurokawa, S. Ichimura, and M. Tomita,

J. Appl. Phys. 102, 073509 (2007)査読有り

Reaction analysis of initial oxidation of silicon by UV-light-excited ozone and the application to rapid and uniform SiO2 film growth,

A. Tosaka, H. Nonaka, S. Ichimura, and T. Nishiguchi,

J. Appl. Phys. 101, 0304909 (2007)査読有り

High quality gate dielectric film on poly-silicon at room temperature by UV light excited ozone,

N. Kameda, T. Nishiguchi, Y. Morikawa, M. Kekura, H. Nonaka, and S. Ichimura,

J. Electrochem. Soc. 154(9), 769-772 (2007)査読有り

Etching-Enhanced Surface Stress Relaxation during Initial Ozone Oxidation,

T. Narushima, M. Kitajima, A. N. Itakura, A. Kurokawa, S. Ichimura and K. Miki,

Surf. Sci. 601, 1384-1388 (2007)査読有り

Observation of Sputtered Si Surface Irradiated with Metal Cluster Complex Ions,

Y. Teranishi, K. Kondou, H. Nonaka, Y. Fujiwara, K. Yamamoto, T. Fujimoto, A. Kurokawa and S. Ichimura,

Surf. Coating Tech. 201, 8641-8655 (2007)査読有り

SIMS depth profile study using metal cluster complex ion bombardment,,

M. Tomita, T. Kinno, M. koike, H. Tanaka, S. Takeno, Y. Fujiwara, K.Kondou, Y. Teranishi, H. Nonaka, T. Fujimoto, A. Kurokawa, and S. Ichimura,

Nucl. Instr. Methods B258, 242-245 (2007)査読有り

Sputtered Si surface irradiated by metal cluster complex ions such as Os3(CO)12 and Ir4(CO)12,

Y. Teranishi, K. Kondou, Y. Fujiwara, H. Nonaka, T. Fujimoto, S. Ichimura, and M. Tomita,

Nucl. Instr. Methods B257, 670-676 (2007)査読有り

Irradiation characteristics of metal-cluster-complex ions containing diverse multi-elements with large mass difference,

Y. Fujiwara, K.Kondou, Y. Teranishi, H. Nonaka, N. Saito, T. Fujimoto, A. Kurokawa, S. Ichimura, and M. Tomita,

Nucl. Instr. Methods B257, 653-657 (2007)査読有り

Beam-induced nanoscale ripple formation on silicon with the metal-cluster-complex ion of Ir4(CO)7+,

Y. Fujiwara, K. Kondou, K. Watanabe, H. Nonaka, N. Saito, H. Itoh, T. Fujimoto, A. Kurokawa, S. Ichimura, and M. Tomita,

Jpn. J. Appl. Phys. 46 (35), L854-L857 (2007)査読有り

Secondary-Ion-Mass-Spectrometry Depth Profiling of Ultra-Shallow Boron Delta Layers in Silicon with the Massive Molecular Ion Beam of Ir4(CO)7+,

Y. Fujiwara, K. Kondou, Kouji Watanabe, H. Nonaka, N. Saito, T. Fujimoto, A. Kurokawa, S. Ichimura, and M. Tomita,

Jpn. J. Appl. Phys. 46 (11) 7599-7601 (2007)査読有り

Rapid Oxidation of Silicon Using UV-Light Irradiation in Low-Pressure, Highly Concentrated Ozone Gas below 300 deg C,

T. Nishiguchi, S. Saitoh, N. Kameda, Y. Morikawa, M. Kekura, H. Nonaka, and S. Ichimura,

Jpn. J. Appl. Phys. 46 (5), 2835-2839 (2007)査読有り

Development of Tip characterizer for ISO standards,

C. Wang, H. Itoh, J. Sun, J. Hu, D. Shen, S. Ichimura,

J. Chin. Electron Microscopy Soc. 27 (6), 576-581 (2007)査読有り

Concentration Sensor for Hydrogen-Methane Mixed Gas Based on Quartz Oscillator,

Y. Kobayashi,A. Kurokawa, T. Kobayashi, H. Hojo, H. Nonaka, S. Ichimura, and M. Hirata,

J. Thermal Sci. Technol. 2(1), 102-110 (2007)査読有り

Characteristics of a cluster-ion beam of Os3(CO)n+ (n=7 or 8) for low damage sputtering,

Y. Fujiwara, K.Kondou, Y. Teranishi, H. Nonaka, T. Fujimoto, A. Kurokawa, S. Ichimura, and M. Tomita,

Surf. Interface Anal. 38, 1539-1544 (2006)査読有り

Tip characterizer for atomic force microscopy,

H. Itoh, T. Fujimoto, and S. Ichimura,

Rev. Sci. Instrum. 77(10), 103704-103707 (2006)査読有り

Ion beam characteristics of the metal cluster complex of Ir4(CO)12,

Y. Fujiwara, K.Kondou, Y. Teranishi, H. Nonaka, T. Fujimoto, A. Kurokawa, and S. Ichimura,

J. Appl. Phys. 100, 043305 (2006)査読有り

Depth resolution improvement in secondary ion mass spectrometry analysis using metal cluster complex ion bombardment,

M. Tomita, T. Kinno, M. Koike, H. Tanaka, S. Takeo, Y. Fujiwara, K. Kondou, Y. Teranishi, H. Nonaka, T. Fujimoto, A. Kurokawa, and S. Ichimura,

Appl. Phys. Lett. 89, 053123 (2006)査読有り

Secondary ion mass spectrometry of organic thin films using a metal-cluster complex ion source,

Y. Fujiwara, K. Kondou, H. Nonaka, N. Saito, H. Itoh, T. Fujimoto, A. Kurokawa, S. Ichimura and M. Tomita,

Jpn. J. Appl. Phys. 45, L987-990 (2006)査読有り

Observation of Sputtered Si Surface Irradiated with Metal Cluster Complex Ions,

Y. Teranishi, K. Kondou, Y. Fujiwara, H. Nonaka, M. Tomita, K. Yamamoto, T. Fujimoto and S. Ichimura,

Jpn. J. Appl. Phys. 45, 5528-5530 (2006)査読有り

Production of stable ion beam of Os3(CO)12 with compact metal-cluster-complex ion source,

Y. Fujiwara, K. Kondou, Y. Teranishi, H. Nonaka, T. Fujimoto, A. Kurokawa and S. Ichimura,

Jpn. J. Appl. Phys. 45, 6000-6007 (2006)査読有り

Fragmentation Analysis of Matrix-Assisted Laser Desorption/Ionization (MALDI) Process in a Mass Range from Peptides to Macromolecules by Superconducting Ion Detectors,

M. Okubo, Y. Shigeri, T. Kinumi, N. Saito, M. Ukibe, Y.E. Chen, A. Kushino, A. Kurokawa, and S. Ichimura,

Nucl. Instrum. Method. Phys. Res. A559, 779-781 (2006) 査読有り

A possible hydrogen sensing method with dual pressure gauges,

A. Suzuki, A. Kurokawa, H. Nonaka, S. Ichimura,

Sensors and Actuators A 127(No.1) , 37-40 (2006)査読有り

Application of Metal Cluster Complex Ion Beam for Low Damage Sputtering,

T. Fujimoto, T. Mizota, H. Nonaka, A. Kurrokawa, and S. Ichimura,

Surf. Interface Anal. 37, 164-166 (2005)査読有り

Rapid and uniform SiO2 film growth on 4 inch Si wafer using 100%-O3 gas,

T. Nishiguchi, Y. Sato, H. Nonaka, S. Ichimura, T. Noyori, Y. Morikawa, M. Kekura and Y. Nihei ,

Jpn. J. Appl. Phys. 44(1A), 118-124 (2005)査読有り

Low-temperature oxidation of silicon using UV-light-enhanced ozone,

A. Tosaka, T. Nishiguchi, H. Nonaka and S. Ichimura,

Jpn. J. Appl. Phys. 36, L1144-L1146 (2005)査読有り

Synthesis of silicon dioxide film using high-concentration ozone and evaluation of the film quality,

K. Koike, K. Izumi, S. Nakamura, G. Inoue, A. Kurokawa, and S. Ichimura,

J. Electronic Mater. 34 (No.3), 240-247 (2005)査読有り

Experimental determination of electron inelastic mean free paths in 13 elemental solids in the 50 to 5000 eV energy range by elastic peak electron spectroscopy,

S. Tanuma, T. Shiratori, K. kimura, K. Goto, S. Ichimura, and C.J. Powell,

Surf. Interface Anal. 37, 833-845 (2005)査読有り

Vibrational spectroscopic study of the interface of SiO2/Si(100) fabricated by highly concentrated ozone: direct evidence for less strained Si-O-Si bond angle,

K. Nakamura and S. Ichimura,

Jpn. J. Appl. Phys. 44 (No.10) 7602-7604 (2005)査読有り

Effect of spatial nonuniformity of superconducting-tunnel-junction ion detectors on mass spectroscopy,

M. Ohkubo, M. Ukibe, N. Saito, A. Kushino, S. Ichimura, S. Friedrich,

IEEE Trans. Appl. Super. 15, 932-935 (2005)査読有り

高濃度オゾンガスの局所リアルタイム濃度測定法の開発,

佐藤陽亮、西口哲也、野中秀彦、一村信吾、二瓶好正,

J. Vac. Soc. Jpn. 48, 378-381 (2005)査読有り

金属クラスター錯体を用いたクラスターイオン銃の開発、

藤本俊幸、溝田武志、野中秀彦、黒河 明、一村信吾、

J. Surf. Anal. 12, 2-8 (2005)査読有り

Development of a continuous generation/supply system of highly-concentrated ozone gas for low-temperature oxidation process,

S. Ichimura, H. Nonaka, Y. Morikawa, T. Noyori, T. Nishiguchi, and M. Kekura,

J. Vac. Sci. Technol. A 22,1410-1414 (2004)査読有り

Relation between Ozone-Oxidation and Stress Evolution on H/Si Surface,

A. Kurokawa, T. Narushima, K. Nakamura, H. Nonaka, S. Ichimura, A. Itakura, and M. Kitajima ,

Jpn. J. Appl. Phys. 43, 281-286 (2004)査読有り

Partial pressure measurement of atmospheric-pressure binary gas with two pressure gauges,

A. Kurokawa, K. Odaka, and S. Ichimura,

Vaccum 73, 301-304(2004)査読有り

Development of compact cluster ion source using metal cluster complexes,

T. Mizota, H. Nonaka, T. Fujimoto, A. Kurokawa and S. Ichimura,

Appl. Surf. Sci. 231-232, 945-948 (2004)査読有り

Photon energy dependence of spatial non-uniformity in superconducting tunnel junction detectors between 200 eV and 10 keV,

M. Okubo, M. Ukibe, T. Zama, T. Ikeuchi, M. Katagiri, and S. Ichimura,

Nucl. Instrum. Meth. Phys. Appl. Res. A 520, 231-233 (2004)査読有り

Direct measurement of nonresonant multiphoton ionization profile for Xe Atoms -dependence on incident laser wavelength and ionized charge state- ,

S. Ichimura,

J. Surf. Anal. 10, 181-184 (2003)査読有り

High-quality SiO2 film formation by highly concentrated ozone gas at below 600℃,

T. Nishiguchi, H. Nonaka, S. Ichimura, Y. Morikawa, M. Kekura, and M. Miyamoto,

Appl. Phys. Lett. 81, 2190-2192 (2002)査読有り

Highly concentrated ozone gas supplied at an atmospheric pressure condition as a new oxidizing reagent for the formation of SiO2 thin film on Si,

K. Koike, S. Ichimura, A. Kurokawa, and K. Nakamura,

J. Electronic Mater. 31, 108-112 (2002)査読有り

Effect of highly concentrated ozone on the etching properties of peroxide films on Si(100),

K. Nakamura, S. Ichimura, A. Kurokawa, and K.Koike,

Jpn. J. Appl. Phys. 41, L754 - L757 (2002)査読有り

Enhanced Silicon Oxidation by a Hyperthermal Beam Obtained from Laser Evaporation of Solid Ozone,

T. Nishiguchi, Y. Morikawa, M. Kekura, M. Miyamoto, H. Nonaka, and S. Ichimura,

J. Electrochem. Soc. 149, F29-F34 (2002)査読有り

Reactive oxygen beam generation system using pulsed laser evaporation of highly concentrated solid ozone,

T. Nishiguchi, Y. Morikawa, M. Kekura, M. Miyamoto, H. Nonaka, and S. Ichimura,

Rev. Sci. Instrum. 73, 1217-1223 (2002)査読有り

Backscattering correction for AES spectra measured at oblique incidence of primary electron beam,

Y. Shimotsuma and S. Ichimura,

Surf. Interface Ana. 31, 102-105 (2001)査読有り

Initial oxidation process by ozone on Si (100) investigated by scanning tunneling microsc,

H. Itoh, K. Nakamura, A. Kurokawa, and S. Ichimura ,

Surf. Sci. 482-485. 114-120 (2001)査読有り

Hyperthermal beam for oxidation and nitridation produced by laser evaporation of mixed O3/N2O cryogenic film,

T. Nishiguchi, Y. Morikawa, M. Miyamoto, H. Nonaka, and S. Ichimura,

Jpn. J. Appl. Phys. 40, L897-L899 (2001)査読有り

Nitrogen profile in SiOxNy prepared by thermal nitridation of ozone oxide,

K. Nakajima, K. Kimura, A. Kurokawa, S. Ichimura, and H. Fukuda,

Jpn. J. Appl. Phys. 40, 4011-4012 (2001)査読有り

Enhanced oxidation of silicon using a collimated hyperthermal ozone beam,

T. Nishiguchi, Y. Morikawa, M. Miyamoto,H. Nonaka, and S. Ichimura,

Appl. Phys. Lett. 79, 382-384 (2001) 査読有り

Atomic force microscopy observation of layer-by-layer growth of ultrathin silicon dioxide by ozone gas at room temperarure,

T. Maeda, A. Kurokawa, K. Sakamoto, A. Ando, H. Itoh and S. Ichimura,

J. Vac. Sci. Technol. B19, 589-592 (2001)査読有り

Ultrathin SiO2 film growth on Si by highly concentrated ozone,

S. Ichimura, A. Kurokawa, K. Nakamura, H. Itoh, H. Nonaka, and K. Koike,

Thin Solid Films 377-378, 518-524 (2000)査読有り

XPS analysis of ultra-thin SiO2 film growth on Si by ozone,

S. Ichimura, K. Koike, A. Kurokawa, K. Nakamura, and H. Itoh,

Surf. Interface. Anal. 30, 497-501 (2000)査読有り

Estimation of surface excitation correction factor for 200-5000 eV in Ni from absolute elastic scattering electron spectroscopy,

S. Tanuma, S. Ichimura, and K. Goto,

Surf. Interface Anal. 30, 212-216 (2000)査読有り

Effects of ozone treatment on 4H-SiC(0001) surface,

R. Kosugi, S. Ichimura, A. Kurokawa, K. Koike, K. Fukuda, S. Suzuki, H. Okushi, S. Yoshida, and K. Arai,

Appl. Surf. Sci. 159-160, 550-555 (2000)査読有り

Initial Oxidtion of Si(100)2x1 by ozone: Transition of Growth Kinetics from Adsorption to Ultrathin Film Growth,

K. Nakamura, A. Kurokawa, and S. Ichimura,

Jpn. J. Appl. Phys. 39, LL357-359 (2000)査読有り

High-concentration ozone generator for oxidation of silicon operating at atmospheric pressure,

K. Koike, T. Fukuda, S. Ichimura, and A. Kurokawa,

Rev. Sci. Instrum.71 (11), 4182-4187 (2000)査読有り

Reduction of the Interfaceacial Si displacement of ultrathin SiO2 on Si(100) formed by atmospheric-pressure ozone,

A. Kurokawa, K. Nakamura, S. Ichimura, and D.W. Moon,

Appl. Phys. Lett. 76 (4), 493-495 (2000)査読有り

Hyperthermal O3 beam produced by laser ablation of solid-ozone film,

T. Nishiguchi, Y. Morikawa, M. Miyamoto, H. Nonaka, and S. Ichimura

Jpn. J. Appl. Phys. 39, L1200-1202 (2000)査読有り

AESによるセラミックス表面の正確な定量補正法の検討,

下間靖彦、一村信吾,

J. Surf. Anal. 7, 196-201 (2000)査読有り

書籍等出版物

ナノ粒子計測

一村信吾 [ほか] 著 ; 日本分析化学会編

共立出版2018年-2018年

LINK

詳細

ISBN:9784320044562;

超高真空

清水肇, 榎本祐嗣, 一村信吾編著

オーム社1997年-1997年

LINK

詳細

ISBN:4274023605;